FCD620N60ZF
- Mfr.Part #
- FCD620N60ZF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 7.3A DPAK
- Stock
- 16,559
- In Stock :
- 16,559
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 620m Ω @ 3.6A, 10V
- Factory Lead Time :
- 14 Weeks
- Published :
- 2013
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Length :
- 6.73mm
- Power Dissipation-Max :
- 89W Tc
- Width :
- 2.39mm
- Turn-Off Delay Time :
- 35 ns
- Weight :
- 260.37mg
- Gate to Source Voltage (Vgs) :
- 20V
- Drain-source On Resistance-Max :
- 0.62Ohm
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 2
- JESD-609 Code :
- e3
- Fall Time (Typ) :
- 10 ns
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Continuous Drain Current (ID) :
- 7.3A
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Number of Pins :
- 3
- Terminal Finish :
- Tin (Sn)
- Height :
- 6.22mm
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 7.3A Tc
- Turn On Delay Time :
- 15 ns
- Mount :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- Packaging :
- Tape and Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1135pF @ 25V
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- 600V
- Base Part Number :
- FCD620N60
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Series :
- HiPerFET™, Polar™
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rise Time :
- 7ns
- Operating Temperature :
- -55°C~150°C TJ
- Number of Channels :
- 1
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-252AA
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Case Connection :
- DRAIN
- Datasheets
- FCD620N60ZF
FCD620N60ZF Documents

N-Channel Tape & Reel (TR) 620m Ω @ 3.6A, 10V ±20V 1135pF @ 25V 36nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
SuperFET II MOSFET is a new series of high voltage superjunction (SJ) MOSFET that uses charge balance technology to achieve excellent low on-resistance and lower gate charging performance. The technology is designed to minimize conduction loss and provide excellent switching performance, dv/dt ratio and higher avalanche energy. Therefore, SuperFET II MOSFET is very suitable for switching power applications such as PFC, server / telecom power supply, flat screen TV power supply, ATX power supply and industrial power supply. The reverse recovery performance of body diodes optimized by SuperFET II FRFET - MOSFET removes additional components and improves system reliability.
FCD620N60ZF Fearures:
650 V @TJ= 150oC
Max. RDS(on) = 620mΩ
Ultra low gate charge (Typ. Qg = 20nC)
Low effective output capacitance (Typ. Coss.eff = 71pF)
100% avalanche tested
ESD improved capacity
RoHS compliant
FCD620N60ZF Application:
Industrial Power Applications
Solar Inverter / AC-DC Power Supply
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