FCD5N60TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 25V

Published :

2014

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Power Dissipation-Max :

54W Tc

Series :

SuperFET™

Mounting Type :

Surface Mount

Current Rating :

4.6A

Vgs (Max) :

±30V

Pbfree Code :

yes

Mount :

Surface Mount

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

4.6A Tc

ECCN Code :

EAR99

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Radiation Hardening :

No

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Turn On Delay Time :

12 ns

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

600V

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Length :

6.73mm

Number of Elements :

1

REACH SVHC :

No SVHC

Fall Time (Typ) :

22 ns

Threshold Voltage :

5V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Resistance :

950mOhm

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

600V

Width :

6.22mm

Turn-Off Delay Time :

47 ns

Number of Pins :

3

Element Configuration :

Single

Rise Time :

40ns

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

FCD5N60

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Weight :

260.37mg

Rds On (Max) @ Id, Vgs :

950m Ω @ 2.3A, 10V

Gate to Source Voltage (Vgs) :

30V

Factory Lead Time :

14 Weeks

Continuous Drain Current (ID) :

4.6A

Height :

2.39mm

Power Dissipation :

54W

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Vgs(th) (Max) @ Id :

5V @ 250μA