FCD5N60TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

6.22mm

Height :

2.39mm

Vgs (Max) :

±30V

Element Configuration :

Single

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Mount :

Surface Mount

Number of Elements :

1

Mounting Type :

Surface Mount

Factory Lead Time :

14 Weeks

Base Part Number :

FCD5N60

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 25V

Fall Time (Typ) :

22 ns

Gate to Source Voltage (Vgs) :

30V

Number of Terminations :

2

Terminal Form :

Gull wing

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

47 ns

Drain to Source Breakdown Voltage :

600V

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

5V

Vgs(th) (Max) @ Id :

5V @ 250μA

Published :

2014

Pbfree Code :

yes

FET Type :

N-Channel

Radiation Hardening :

No

Continuous Drain Current (ID) :

4.6A

Rds On (Max) @ Id, Vgs :

950m Ω @ 2.3A, 10V

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Turn On Delay Time :

12 ns

Current Rating :

4.6A

Voltage - Rated DC :

600V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Power Dissipation :

54W

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rise Time :

40ns

Resistance :

950mOhm

JESD-609 Code :

e3

Weight :

260.37mg

Number of Pins :

3

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Series :

SuperFET™

Length :

6.73mm

Current - Continuous Drain (Id) @ 25°C :

4.6A Tc

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Power Dissipation-Max :

54W Tc