FCD4N60TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Rise Time :

45ns

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Element Configuration :

Single

Power Dissipation :

50W

Pbfree Code :

yes

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 2A, 10V

Nominal Vgs :

5 V

FET Type :

N-Channel

ECCN Code :

EAR99

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Threshold Voltage :

5V

Power Dissipation-Max :

50W Tc

Height :

2.517mm

Turn-Off Delay Time :

36 ns

Voltage - Rated DC :

600V

Input Capacitance (Ciss) (Max) @ Vds :

540pF @ 25V

Weight :

260.37mg

Gate Charge (Qg) (Max) @ Vgs :

16.6nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Current Rating :

3.9A

Termination :

SMD/SMT

Factory Lead Time :

13 Weeks

Resistance :

1.2Ohm

Turn On Delay Time :

16 ns

Current - Continuous Drain (Id) @ 25°C :

3.9A Tc

JESD-30 Code :

R-PSSO-G2

Number of Channels :

1

Mount :

Surface Mount

REACH SVHC :

No SVHC

Max Junction Temperature (Tj) :

150°C

Width :

6.22mm

Published :

2013

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

5V @ 250μA

Length :

6.73mm

Radiation Hardening :

No

Number of Pins :

3

Fall Time (Typ) :

30 ns

Base Part Number :

FCD4N60

Number of Terminations :

2

Case Connection :

DRAIN

Contact Plating :

Tin

Dual Supply Voltage :

600V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Continuous Drain Current (ID) :

3.9A

Drain to Source Breakdown Voltage :

600V

Series :

SuperFET™