FCD360N65S3R0

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

25A

DS Breakdown Voltage-Min :

650V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-252AA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

40 mJ

Drain Current-Max (Abs) (ID) :

10A

Drain to Source Voltage (Vdss) :

650V

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Power Dissipation-Max :

83W Tc

JESD-30 Code :

R-PSSO-G2

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

360m Ω @ 5A, 10V

Number of Terminations :

2

Series :

SuperFET® III

Input Capacitance (Ciss) (Max) @ Vds :

730pF @ 400V

Number of Elements :

1

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

RoHS Status :

RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

FET Type :

N-Channel

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain-source On Resistance-Max :

0.36ohm

Terminal Position :

Single

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Packaging :

Tape and Reel (TR)

Factory Lead Time :

14 Weeks

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)