FCD360N65S3R0

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Pbfree Code :

yes

DS Breakdown Voltage-Min :

650V

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Pulsed Drain Current-Max (IDM) :

25A

RoHS Status :

RoHS Compliant

Surface Mount :

yes

Drain-source On Resistance-Max :

0.36ohm

Packaging :

Tape and Reel (TR)

JEDEC-95 Code :

TO-252AA

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

360m Ω @ 5A, 10V

Drain Current-Max (Abs) (ID) :

10A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Case Connection :

DRAIN

Power Dissipation-Max :

83W Tc

Input Capacitance (Ciss) (Max) @ Vds :

730pF @ 400V

Series :

SuperFET® III

Factory Lead Time :

14 Weeks

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Vgs (Max) :

±30V

Avalanche Energy Rating (Eas) :

40 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

650V

Terminal Position :

Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63