FCD260N65S3

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Mfr.Part #
FCD260N65S3
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 650V 12A TO252
Stock
26,214
In Stock :
26,214

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Published :
2016
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Vgs (Max) :
±30V
FET Type :
N-Channel
Factory Lead Time :
15 Weeks
Mounting Type :
Surface Mount
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drive Voltage (Max Rds On,Min Rds On) :
10V
Packaging :
Tape and Reel (TR)
Power Dissipation-Max :
90W Tc
Series :
SuperFET® III
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~150°C TJ
Rds On (Max) @ Id, Vgs :
260m Ω @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C :
12A Tc
Pbfree Code :
yes
Gate Charge (Qg) (Max) @ Vgs :
24nC @ 10V
Drain to Source Voltage (Vdss) :
650V
Vgs(th) (Max) @ Id :
4.5V @ 1.2mA
Input Capacitance (Ciss) (Max) @ Vds :
1010pF @ 400V
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Reach Compliance Code :
not_compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Datasheets
FCD260N65S3
Introducing Transistors - FETs, MOSFETs - Single onsemi FCD260N65S3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, FCD260N65S3 pinout, FCD260N65S3 datasheet PDF, FCD260N65S3 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FCD260N65S3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FCD260N65S3


N-Channel Tape & Reel (TR) 260m Ω @ 6A, 10V ±30V 1010pF @ 400V 24nC @ 10V 650V TO-252-3, DPak (2 Leads + Tab), SC-63

FCD260N65S3 Description


FCD260N65S3 is a 650v SUPERFET? III  N-Channel Power MOSFET. SUPERFIT III MOSFET is ON Semiconductor’s brand?new high voltage super?junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on?resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rates. Consequently, the SUPERFIT III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. 



FCD260N65S3 Features


  • 700V@ Tj= 150 °C

  • Low Effective Output Capacitance (Typ. Cossleff.)= 248 pF)

  • Ultra-Low Gate Charge (Typ. Qg= 24 nC)

  • Optimized Capacitance

  • Internal Gate resistance: 8.7ohm

  • Typ. RDS(on) = 222 mQ

  • 100% Avalanche Tested

  • RoHS Compliant RoHS Compliant

  • Wave soldering guarantee



FCD260N65S3 Applications


  • Notebook / Desktop computer / Game console

  • LCD / LED TV

  • Telecom / Server

  • LED Lighting / Ballast

  • Adapter


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