FCD1300N80Z
- Mfr.Part #
- FCD1300N80Z
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 4A DPAK
- Stock
- 7,923
- In Stock :
- 7,923
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Weight :
- 260.37mg
- Gate Charge (Qg) (Max) @ Vgs :
- 21nC @ 10V
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id :
- 4.5V @ 400μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Channels :
- 1
- Drain Current-Max (Abs) (ID) :
- 4A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 880pF @ 100V
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 52W Tc
- Vgs (Max) :
- ±20V
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Series :
- SuperFET® II
- Gate to Source Voltage (Vgs) :
- 30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Reach Compliance Code :
- not_compliant
- Turn On Delay Time :
- 14 ns
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 33 ns
- Terminal Finish :
- Tin (Sn)
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Rds On (Max) @ Id, Vgs :
- 1.3 Ω @ 2A, 10V
- Peak Reflow Temperature (Cel) :
- 245
- Pbfree Code :
- yes
- Continuous Drain Current (ID) :
- 4A
- Fall Time (Typ) :
- 6 ns
- Resistance :
- 1.3Ohm
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 800V
- Rise Time :
- 8.3ns
- Factory Lead Time :
- 15 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- FCD1300N80Z

N-Channel Tape & Reel (TR) 1.3 Ω @ 2A, 10V ±20V 880pF @ 100V 21nC @ 10V 800V TO-252-3, DPak (2 Leads + Tab), SC-63
FCD1300N80Z Description
FCD1300N80Z is a type of N-channel SUPERFET II MOSFET that belongs to the brand?new high voltage super?junction (SJ) MOSFET family provided by ON Semiconductor. Based on the charge balance technology, it can offer outstanding low on?resistance and lower gate charge performance, minimize conduction loss, and provide superior switching performance and higher avalanche energy. Over 2kV HBM surge stress can be withstood based on its internal gate-source ESD diode.
FCD1300N80Z Features
-
Advanced charge balance technology
-
Low on?resistance
-
Lower gate charge
-
Low conduction loss
-
Available in the D-PAK package
FCD1300N80Z Applications
-
Audio
-
Lighting
-
Laptop adapter
-
ATX power and industrial power applications
-
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