FCB36N60NTM
- Mfr.Part #
- FCB36N60NTM
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 36A D2PAK
- Stock
- 3,045
- In Stock :
- 3,045
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 22ns
- Contact Plating :
- Tin
- Length :
- 10.67mm
- Current - Continuous Drain (Id) @ 25°C :
- 36A Tc
- Lead Free :
- Lead Free
- Base Part Number :
- FCB36N60
- Element Configuration :
- Single
- Vgs (Max) :
- ±30V
- Turn-Off Delay Time :
- 94 ns
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- Published :
- 2013
- Turn On Delay Time :
- 23 ns
- Continuous Drain Current (ID) :
- 36A
- Fall Time (Typ) :
- 4 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Temperature :
- -55°C~150°C TJ
- Threshold Voltage :
- 2V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Breakdown Voltage :
- 600V
- Factory Lead Time :
- 4 Weeks
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 4785pF @ 100V
- FET Type :
- N-Channel
- Resistance :
- 90mOhm
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Series :
- SupreMOS™
- Gate Charge (Qg) (Max) @ Vgs :
- 112nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Surface Mount
- Weight :
- 1.762g
- Power Dissipation :
- 312W
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 90m Ω @ 18A, 10V
- REACH SVHC :
- No SVHC
- Power Dissipation-Max :
- 312W Tc
- Width :
- 11.33mm
- Height :
- 4.83mm
- Datasheets
- FCB36N60NTM
FCB36N60NTM Documents

N-Channel Tape & Reel (TR) 90m Ω @ 18A, 10V ±30V 4785pF @ 100V 112nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FCB36N60NTM Description
The FCB36N60NTM is an N-channel SupreMOS high voltage super-junction MOSFET that differs from other SJ MOSFETs using a deep Trench filling method. Lowest Rsp ON-resistance improved switching performance, and ruggedness is provided by this cutting-edge technology and exact process control. For high-frequency switching power converter applications including PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications, SupreMOS MOSFETs are appropriate.
FCB36N60NTM Features
-
100% avalanche tested
-
RoHS compliant
-
RDS(on) = 81m? ( Typ.) @ VGS = 10V, ID = 18A
-
Ultra low gate charge ( Typ. Qg = 86nC )
-
Low effective output capacitance ( Typ. Coss.eff = 361pF )
FCB36N60NTM Applications
-
Solar Inverter
-
AC-DC Power Supply
-
Industrial
-
Power Management
-
Communications & Networking
-
Alternative Energy
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FCB36N60NTM | onsemi | 3,045 | POWER MOSFET, N-CHANNEL, SUPREMO |
















