FCB36N60NTM

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Mfr.Part #
FCB36N60NTM
Manufacturer
onsemi
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 600V 36A D2PAK
Stock
3,045
In Stock :
3,045

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Rise Time :
22ns
Contact Plating :
Tin
Length :
10.67mm
Current - Continuous Drain (Id) @ 25°C :
36A Tc
Lead Free :
Lead Free
Base Part Number :
FCB36N60
Element Configuration :
Single
Vgs (Max) :
±30V
Turn-Off Delay Time :
94 ns
Operating Mode :
ENHANCEMENT MODE
JESD-609 Code :
e3
Published :
2013
Turn On Delay Time :
23 ns
Continuous Drain Current (ID) :
36A
Fall Time (Typ) :
4 ns
Vgs(th) (Max) @ Id :
4V @ 250µA
Operating Temperature :
-55°C~150°C TJ
Threshold Voltage :
2V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Breakdown Voltage :
600V
Factory Lead Time :
4 Weeks
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mount :
Surface Mount
Number of Pins :
3
Radiation Hardening :
No
Input Capacitance (Ciss) (Max) @ Vds :
4785pF @ 100V
FET Type :
N-Channel
Resistance :
90mOhm
Packaging :
Tape and Reel (TR)
Pbfree Code :
yes
RoHS Status :
ROHS3 Compliant
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Series :
SupreMOS™
Gate Charge (Qg) (Max) @ Vgs :
112nC @ 10V
Gate to Source Voltage (Vgs) :
20V
Mounting Type :
Surface Mount
Weight :
1.762g
Power Dissipation :
312W
Number of Elements :
1
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
90m Ω @ 18A, 10V
REACH SVHC :
No SVHC
Power Dissipation-Max :
312W Tc
Width :
11.33mm
Height :
4.83mm
Introducing Transistors - FETs, MOSFETs - Single onsemi FCB36N60NTM from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:FCB36N60, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Pins:3, Mounting Type:Surface Mount, FCB36N60NTM pinout, FCB36N60NTM datasheet PDF, FCB36N60NTM amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FCB36N60NTM ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FCB36N60NTM


N-Channel Tape & Reel (TR) 90m Ω @ 18A, 10V ±30V 4785pF @ 100V 112nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FCB36N60NTM Description

The FCB36N60NTM is an N-channel SupreMOS high voltage super-junction MOSFET that differs from other SJ MOSFETs using a deep Trench filling method. Lowest Rsp ON-resistance improved switching performance, and ruggedness is provided by this cutting-edge technology and exact process control. For high-frequency switching power converter applications including PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications, SupreMOS MOSFETs are appropriate.


FCB36N60NTM Features

  • 100% avalanche tested

  • RoHS compliant

  • RDS(on) = 81m? ( Typ.) @ VGS = 10V, ID = 18A

  • Ultra low gate charge ( Typ. Qg = 86nC )

  • Low effective output capacitance ( Typ. Coss.eff = 361pF )


FCB36N60NTM Applications

  • Solar Inverter

  • AC-DC Power Supply

  • Industrial

  • Power Management

  • Communications & Networking

  • Alternative Energy


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