FCB070N65S3
- Mfr.Part #
- FCB070N65S3
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 44A D2PAK
- Stock
- 20,622
- In Stock :
- 20,622
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 13 Weeks
- Power Dissipation-Max :
- 312W Tc
- REACH SVHC :
- No SVHC
- Terminal Finish :
- Tin (Sn)
- Threshold Voltage :
- 4.5V
- Rds On (Max) @ Id, Vgs :
- 70m Ω @ 22A, 10V
- Vgs (Max) :
- ±30V
- Published :
- 2016
- Gate Charge (Qg) (Max) @ Vgs :
- 78nC @ 10V
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 312W
- Terminal Form :
- Gull wing
- Reach Compliance Code :
- not_compliant
- Number of Terminations :
- 2
- Weight :
- 1.31247g
- Vgs(th) (Max) @ Id :
- 4.5V @ 4.4mA
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 89 ns
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Series :
- SuperFET® III
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 44A
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- FET Type :
- N-Channel
- ECCN Code :
- EAR99
- Height :
- 4.83mm
- Turn On Delay Time :
- 26 ns
- Number of Elements :
- 1
- Additional Feature :
- AVALANCHE RATED, HIGH VOLTAGE
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- DRAIN
- Drain to Source Breakdown Voltage :
- 650V
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.07Ohm
- Gate to Source Voltage (Vgs) :
- 30V
- JESD-30 Code :
- R-PSSO-G2
- Input Capacitance (Ciss) (Max) @ Vds :
- 3090pF @ 400V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Peak Reflow Temperature (Cel) :
- 245
- Max Junction Temperature (Tj) :
- 150°C
- RoHS Status :
- ROHS3 Compliant
- Number of Channels :
- 1
- Datasheets
- FCB070N65S3
FCB070N65S3 Documents

N-Channel Tape & Reel (TR) 70m Ω @ 22A, 10V ±30V 3090pF @ 400V 78nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FCB070N65S3 Description
The ON Semiconductor FCB070N65S3 is the SUPERFET III MOSFET, which is part of ON Semiconductor's brand-new high voltage super junction (SJ) MOSFET family that employs charge balance technology for exceptional low on-resistance and lower gate charge performance.
FCB070N65S3 Features
-
700 V @ TJ = 150°C
-
RDS(on) = 62 m (Typ.)
-
Ultra Low Gate Charge (Typ. Qg = 78 nC)
-
Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)
-
100% Avalanche Tested
-
These Devices are Pb?Free and are RoHS Compliant
FCB070N65S3 Applications
-
Telecom / Server Power Supplies
-
Industrial Power Supplies
-
UPS / Solar
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