FCA76N60N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

8022 mJ

FET Type :

N-Channel

Power Dissipation :

543W

Case Connection :

DRAIN

Threshold Voltage :

2V

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

285nC @ 10V

Power Dissipation-Max :

543W Tc

Element Configuration :

Single

ECCN Code :

EAR99

Rise Time :

24ns

Continuous Drain Current (ID) :

76A

Pbfree Code :

yes

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

36m Ω @ 38A, 10V

Factory Lead Time :

12 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

12385pF @ 100V

Current - Continuous Drain (Id) @ 25°C :

76A Tc

RoHS Status :

ROHS3 Compliant

Published :

2008

Package / Case :

TO-3P-3, SC-65-3

Transistor Element Material :

SILICON

Packaging :

Tube

Turn On Delay Time :

34 ns

Number of Elements :

1

Turn-Off Delay Time :

235 ns

Drain to Source Breakdown Voltage :

600V

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

228A

Radiation Hardening :

No

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Width :

5mm

Height :

20.1mm

Fall Time (Typ) :

32 ns

Number of Pins :

3

Length :

15.8mm

Weight :

6.401g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±30V

Gate to Source Voltage (Vgs) :

30V

Mount :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Series :

SupreMOS™

Terminal Finish :

Tin (Sn)