FCA76N60N
- Mfr.Part #
- FCA76N60N
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 76A TO3PN
- Stock
- 1,352
- In Stock :
- 1,352
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 12 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 12385pF @ 100V
- Width :
- 5mm
- Number of Pins :
- 3
- Turn On Delay Time :
- 34 ns
- Package / Case :
- TO-3P-3, SC-65-3
- Case Connection :
- DRAIN
- ECCN Code :
- EAR99
- Published :
- 2008
- Height :
- 20.1mm
- Turn-Off Delay Time :
- 235 ns
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Avalanche Energy Rating (Eas) :
- 8022 mJ
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rise Time :
- 24ns
- Weight :
- 6.401g
- Current - Continuous Drain (Id) @ 25°C :
- 76A Tc
- Length :
- 15.8mm
- Pbfree Code :
- yes
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Mount :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 285nC @ 10V
- Power Dissipation-Max :
- 543W Tc
- Series :
- SupreMOS™
- Rds On (Max) @ Id, Vgs :
- 36m Ω @ 38A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation :
- 543W
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- 600V
- Pulsed Drain Current-Max (IDM) :
- 228A
- Continuous Drain Current (ID) :
- 76A
- Threshold Voltage :
- 2V
- Terminal Finish :
- Tin (Sn)
- Vgs (Max) :
- ±30V
- Element Configuration :
- Single
- Fall Time (Typ) :
- 32 ns
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Datasheets
- FCA76N60N

N-Channel Tube 36m Ω @ 38A, 10V ±30V 12385pF @ 100V 285nC @ 10V TO-3P-3, SC-65-3
After the high voltage super-junction (SJ) technology being developed, FCA76N60N SupreMOS? MOSFET came to being based on a deep trench filling process. This process is what differenciates it from the conventional SJ MOSFETs. Based on the sophisticated technology and process, FCA76N60N is especially tailored to provide lowest Rsp on-resistance, reliable performance, and superior ruggedness. It features small drive power, fast switching, large on-state voltage drop, and small current-carrying sensity. FCA76N60N SupreMOS? MOSFET is ideally suitable for various applications, including solar inverters, AC-DC power supply, etc.
FCA76N60N Features
Typical rise and fall time of 24 ns and 32 ns, respectively
Typical turn-on and turn-off delay time of 34 ns and 235 ns, respectively
Operational temperature of -55 °C to 150 °C
High avalanche energy strength
Available in TO-3PN-3 package
FCA76N60N Applications
PFC (power factor correction)
Server/telecom power
FPD (flat panel display) TV power
ATX (advanced technology extended) power
Industrial power applications
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