FCA47N60F
- Mfr.Part #
- FCA47N60F
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 47A TO3PN
- Stock
- 1,727
- In Stock :
- 1,727
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 47A Tc
- Power Dissipation-Max :
- 417W Tc
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 417W
- Height :
- 20.1mm
- Pbfree Code :
- yes
- Published :
- 2013
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Breakdown Voltage :
- 600V
- Length :
- 16.2mm
- Weight :
- 6.401g
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 73m Ω @ 23.5A, 10V
- Contact Plating :
- Tin
- Gate Charge (Qg) (Max) @ Vgs :
- 270nC @ 10V
- Turn On Delay Time :
- 185 ns
- Factory Lead Time :
- 12 Weeks
- Continuous Drain Current (ID) :
- 47A
- Width :
- 5mm
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Rise Time :
- 210ns
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- RoHS Status :
- ROHS3 Compliant
- Threshold Voltage :
- 3V
- Turn-Off Delay Time :
- 520 ns
- Vgs (Max) :
- ±30V
- Fall Time (Typ) :
- 75 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Qualification Status :
- Not Qualified
- Mounting Type :
- Through Hole
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Series :
- SuperFET™
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Input Capacitance (Ciss) (Max) @ Vds :
- 8000pF @ 25V
- FET Type :
- N-Channel
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Package / Case :
- TO-3P-3, SC-65-3
- Datasheets
- FCA47N60F

N-Channel Tube 73m Ω @ 23.5A, 10V ±30V 8000pF @ 25V 270nC @ 10V TO-3P-3, SC-65-3
Description
The FCA47N60F is a SuperFET? FRFET? MOSFET with an N-Channel. ON Semiconductor's SuperFET? MOSFET is the company's first high-voltage super-junction (SJ) MOSFET series to use charge balance technology for remarkable low on-resistance and low gate charge performance. This technology is designed to reduce conduction loss, improve switching performance, increase dv/dt rate, and increase avalanche energy. As a result, SuperFET MOSFETs are ideal for switching power applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power. The enhanced body diode reverse recovery performance of SuperFET FRFET? MOSFETs can eliminate extraneous components and improve system reliability.
Features
-
Ultra Low Gate Charge (Typ. Qg = 210 nC)
-
Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF)
-
100% Avalanche Tested
-
RoHS Compliant
-
650 V @ TJ = 150 °C
-
Typ. RDS(on) = 62 mΩ
-
Fast Recovery Time (Typ. Trr = 240 ns)
Applications
-
Solar Inverter
-
AC-DC Power Supply
-
Automotive electronics
-
Particularly as Switching Devices in Electronic Control Units
-
As Power Converters in Modern Electric Vehicles
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