FCA36N60NF
- Mfr.Part #
- FCA36N60NF
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 34.9A TO3PN
- Stock
- 309
- In Stock :
- 309
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Through Hole
- REACH SVHC :
- No SVHC
- Series :
- FRFET®, SuperFET® II
- Pbfree Code :
- yes
- Rise Time :
- 17ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Threshold Voltage :
- 3.7V
- Number of Terminations :
- 3
- Terminal Finish :
- Tin (Sn)
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 600V
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 312W Tc
- Drain-source On Resistance-Max :
- 0.095Ohm
- Package / Case :
- TO-3P-3, SC-65-3
- Vgs (Max) :
- ±30V
- Nominal Vgs :
- 3.7 V
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- FET Type :
- N-Channel
- Height :
- 20.1mm
- Gate Charge (Qg) (Max) @ Vgs :
- 112nC @ 10V
- Fall Time (Typ) :
- 4 ns
- Rds On (Max) @ Id, Vgs :
- 95m Ω @ 18A, 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Turn-Off Delay Time :
- 92 ns
- Power Dissipation :
- 312W
- Length :
- 16.2mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 6.401g
- Factory Lead Time :
- 39 Weeks
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Turn On Delay Time :
- 27 ns
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 5mm
- Number of Elements :
- 1
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Published :
- 2013
- Current - Continuous Drain (Id) @ 25°C :
- 34.9A Tc
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Continuous Drain Current (ID) :
- 34.9A
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 4245pF @ 100V
- Datasheets
- FCA36N60NF
FCA36N60NF Documents

N-Channel Tube 95m Ω @ 18A, 10V ±30V 4245pF @ 100V 112nC @ 10V TO-3P-3, SC-65-3
FCA36N60NF Description
The SupreMOS MOSFET is On Semiconductor's next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Supre-MOS FRFET MOSFET's optimized body diode reverse recovery performance can remove additional component and improve system reliability.
FCA36N60NF Features
-
RDS(on) = 80 mΩ (Typ.) @ VGS = 10 V, lD = 18 A
-
UIltra Low Gate Charge (Typ. Qg = 86 nC)
-
Low Effective Output Capacitance (Typ. Coss(eff.) = 338 pF)
-
100% Avalanche Tested
-
RoHS Compliant
-
No SVHC
-
Turn-Off Delay Time: 92 ns
-
Power Dissipation-Max: 312W Tc
FCA36N60NF Applications
-
Solar Inverter
-
AC-DC Power Supply
-
New Energy Vehicle
-
Photovoltaic Generation
-
Wind Power Generation
-
Smart Grid
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FCA35N60 | onsemi | 4,398 | MOSFET N-CH 600V 35A TO3PN |
















