FCA16N60N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

48A

Resistance :

199mOhm

Weight :

6.401g

Min Operating Temperature :

-55°C

Drain to Source Resistance :

170mOhm

Rise Time :

15.5ns

Drain to Source Voltage (Vdss) :

600V

Lead Free :

Lead Free

Factory Lead Time :

12 Weeks

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Contact Plating :

Tin

Published :

2009

REACH SVHC :

No SVHC

Input Capacitance :

2.17nF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

134.4W

Threshold Voltage :

4V

ECCN Code :

EAR99

Turn On Delay Time :

15.8 ns

Rds On Max :

199 mΩ

Polarity/Channel Type :

N-Channel

Max Operating Temperature :

150°C

Turn-Off Delay Time :

60.3 ns

Gate to Source Voltage (Vgs) :

30V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Width :

5mm

Number of Pins :

3

Drain to Source Breakdown Voltage :

600V

Fall Time (Typ) :

20.2 ns

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Max Power Dissipation :

134.4W

Number of Elements :

1

Height :

20.1mm

Transistor Application :

SWITCHING

Number of Terminations :

3

Continuous Drain Current (ID) :

16A

Length :

15.8mm

Packaging :

Tube

Pbfree Code :

yes

Nominal Vgs :

4 V

Mount :

Through Hole

JESD-609 Code :

e3