FCA16N60
- Mfr.Part #
- FCA16N60
- Manufacturer
- onsemi
- Package / Case
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 16A TO3PN
- Stock
- 37,856
- In Stock :
- 37,856
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance :
- 2.17nF
- Weight :
- 6.401g
- Turn-Off Delay Time :
- 60.3 ns
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Rise Time :
- 15.5ns
- Height :
- 20.1mm
- Max Power Dissipation :
- 134.4W
- Element Configuration :
- Single
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JESD-609 Code :
- e3
- Nominal Vgs :
- 4 V
- Min Operating Temperature :
- -55°C
- Power Dissipation :
- 134.4W
- Number of Elements :
- 1
- Turn On Delay Time :
- 15.8 ns
- Drain to Source Resistance :
- 170mOhm
- Lead Free :
- Lead Free
- Factory Lead Time :
- 12 Weeks
- Fall Time (Typ) :
- 20.2 ns
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Through Hole
- Packaging :
- Tube
- REACH SVHC :
- No SVHC
- Width :
- 5mm
- Drain to Source Breakdown Voltage :
- 600V
- Pulsed Drain Current-Max (IDM) :
- 48A
- Max Operating Temperature :
- 150°C
- ECCN Code :
- EAR99
- Length :
- 15.8mm
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Polarity/Channel Type :
- N-Channel
- Contact Plating :
- Tin
- Continuous Drain Current (ID) :
- 16A
- Drain to Source Voltage (Vdss) :
- 600V
- Threshold Voltage :
- 4V
- Rds On Max :
- 199 mΩ
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Published :
- 2009
- Resistance :
- 199mOhm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 30V
- Datasheets
- FCA16N60

Tube 600V
FCA16N60N MOSFET Description
The SupreMos& MOSFET is Onsemi Semiconductor's next generation of high voltage super-Junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provide the lowest Rsp on-resistance, superior switching performance, and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, serveritelecom power, FPD TV power, ATX power, and industrial power applications.
FCA16N60N MOSFET Features
RDS(on) = 170 mΩ (Typ.) @ VGS = 10V, ID = 8 A
Ultra Low Gate Charge (Typ. Qg = 40.2 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 176 pF)
100% Avalanche Tested
RoHS Compliant
FCA16N60N MOSFET Applications
PDP TV
Motor, Solenoid
AC-DC Power Supply
Switching Applications
High Voltage Voltage Converter
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