FCA16N60

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Mfr.Part #
FCA16N60
Manufacturer
onsemi
Package / Case
Datasheet
Download
Description
MOSFET N-CH 600V 16A TO3PN
Stock
37,856
In Stock :
37,856

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Nominal Vgs :
4 V
Rise Time :
15.5ns
Element Configuration :
Single
Radiation Hardening :
No
Number of Elements :
1
Transistor Application :
SWITCHING
Width :
5mm
Height :
20.1mm
Mount :
Through Hole
Drain to Source Resistance :
170mOhm
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Min Operating Temperature :
-55°C
Contact Plating :
Tin
Continuous Drain Current (ID) :
16A
Lead Free :
Lead Free
Turn On Delay Time :
15.8 ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Terminations :
3
Weight :
6.401g
Max Power Dissipation :
134.4W
Fall Time (Typ) :
20.2 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-609 Code :
e3
Resistance :
199mOhm
Operating Mode :
ENHANCEMENT MODE
Length :
15.8mm
RoHS Status :
ROHS3 Compliant
Pbfree Code :
yes
Published :
2009
Threshold Voltage :
4V
Drain to Source Voltage (Vdss) :
600V
Packaging :
Tube
Factory Lead Time :
12 Weeks
REACH SVHC :
No SVHC
Drain to Source Breakdown Voltage :
600V
Pulsed Drain Current-Max (IDM) :
48A
ECCN Code :
EAR99
Turn-Off Delay Time :
60.3 ns
Max Operating Temperature :
150°C
Polarity/Channel Type :
N-Channel
Input Capacitance :
2.17nF
Power Dissipation :
134.4W
Gate to Source Voltage (Vgs) :
30V
Rds On Max :
199 mΩ
Number of Pins :
3
Introducing Transistors - FETs, MOSFETs - Single onsemi FCA16N60 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, FCA16N60 pinout, FCA16N60 datasheet PDF, FCA16N60 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FCA16N60 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FCA16N60


Tube 600V

FCA16N60N MOSFET Description


The SupreMos& MOSFET is Onsemi Semiconductor's next generation of high voltage super-Junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provide the lowest Rsp on-resistance, superior switching performance, and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, serveritelecom power, FPD TV power, ATX power, and industrial power applications. 



FCA16N60N MOSFET Features


RDS(on) = 170 mΩ (Typ.) @ VGS = 10V, ID = 8 A

Ultra Low Gate Charge (Typ. Qg = 40.2 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 176 pF)

100% Avalanche Tested

RoHS Compliant



FCA16N60N MOSFET Applications


PDP TV

Motor, Solenoid

AC-DC Power Supply

Switching Applications

High Voltage Voltage Converter


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