FCA16N60

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Mfr.Part #
FCA16N60
Manufacturer
onsemi
Package / Case
Datasheet
Download
Description
MOSFET N-CH 600V 16A TO3PN
Stock
37,856
In Stock :
37,856

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance :
2.17nF
Weight :
6.401g
Turn-Off Delay Time :
60.3 ns
Number of Terminations :
3
Transistor Application :
SWITCHING
Rise Time :
15.5ns
Height :
20.1mm
Max Power Dissipation :
134.4W
Element Configuration :
Single
Number of Pins :
3
RoHS Status :
ROHS3 Compliant
FET Technology :
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code :
e3
Nominal Vgs :
4 V
Min Operating Temperature :
-55°C
Power Dissipation :
134.4W
Number of Elements :
1
Turn On Delay Time :
15.8 ns
Drain to Source Resistance :
170mOhm
Lead Free :
Lead Free
Factory Lead Time :
12 Weeks
Fall Time (Typ) :
20.2 ns
Operating Mode :
ENHANCEMENT MODE
Mount :
Through Hole
Packaging :
Tube
REACH SVHC :
No SVHC
Width :
5mm
Drain to Source Breakdown Voltage :
600V
Pulsed Drain Current-Max (IDM) :
48A
Max Operating Temperature :
150°C
ECCN Code :
EAR99
Length :
15.8mm
Radiation Hardening :
No
Pbfree Code :
yes
Polarity/Channel Type :
N-Channel
Contact Plating :
Tin
Continuous Drain Current (ID) :
16A
Drain to Source Voltage (Vdss) :
600V
Threshold Voltage :
4V
Rds On Max :
199 mΩ
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Published :
2009
Resistance :
199mOhm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate to Source Voltage (Vgs) :
30V
Datasheets
FCA16N60
Introducing Transistors - FETs, MOSFETs - Single onsemi FCA16N60 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, FCA16N60 pinout, FCA16N60 datasheet PDF, FCA16N60 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FCA16N60 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FCA16N60


Tube 600V

FCA16N60N MOSFET Description


The SupreMos& MOSFET is Onsemi Semiconductor's next generation of high voltage super-Junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provide the lowest Rsp on-resistance, superior switching performance, and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, serveritelecom power, FPD TV power, ATX power, and industrial power applications. 



FCA16N60N MOSFET Features


RDS(on) = 170 mΩ (Typ.) @ VGS = 10V, ID = 8 A

Ultra Low Gate Charge (Typ. Qg = 40.2 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 176 pF)

100% Avalanche Tested

RoHS Compliant



FCA16N60N MOSFET Applications


PDP TV

Motor, Solenoid

AC-DC Power Supply

Switching Applications

High Voltage Voltage Converter


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