ESH3B R6
- Mfr.Part #
- ESH3B R6
- Manufacturer
- Taiwan Semiconductor
- Package / Case
- DO-214AB-2
- Datasheet
- Download
- Description
- DIODE GEN PURP 3A DO214AB
- Stock
- 28,575
- In Stock :
- 28,575
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- Manufacturer :
- Taiwan Semiconductor
- Product Category :
- Diodes - Rectifiers - Single
- Diode Type :
- Standard
- Product Status :
- Discontinued at Digi-Key
- Maximum Continuous Forward Current (A) :
- 3
- Peak Non-Repetitive Surge Current (A) :
- 125
- JEDEC-95 Code :
- DO-214AB
- Pin Count :
- 2
- Mounting Type :
- Surface Mount
- Military :
- No
- ECCN (US) :
- EAR99
- Peak Reverse Current (uA) :
- 5
- Voltage - Forward (Vf) (Max) @ If :
- 900 mV @ 3 A
- Reverse Recovery Time-Max :
- 0.02 µs
- Package Height :
- 2.42(Max)
- Operating Temperature - Junction :
- -55°C ~ 175°C
- Standard Package Name :
- DO-214-AB
- Product Category :
- Rectifiers
- Subcategory :
- Diodes and Rectifiers
- Product Type :
- Rectifiers
- Product :
- Rectifiers
- PCB changed :
- 2
- Peak Reverse Recovery Time (ns) :
- 20
- Current - Reverse Leakage @ Vr :
- 5 µA @ 100 V
- Surface Mount :
- yes
- Maximum DC Reverse Voltage (V) :
- 100
- Package Width :
- 6.22(Max)
- Package Length :
- 7.11(Max)
- Terminal Form :
- C BEND
- Mounting Style :
- SMD/SMT
- Package :
- Tape and Reel (TR)
- Non-rep Pk Forward Current-Max :
- 125 A
- Mounting :
- Surface Mount
- Manufacturer :
- TAIWAN SEMICONDUCTOR
- Reverse Current-Max :
- 5 µA
- Vf - Forward Voltage :
- 900 mV
- Rep Pk Reverse Voltage-Max :
- 100 V
- Type :
- Switching Diode
- Max Surge Current :
- 125 A
- Packaging :
- Tape and Reel
- Supplier Package :
- SMC
- Minimum Operating Temperature (°C) :
- -55
- Peak Reverse Repetitive Voltage (V) :
- 100
- Series :
- ESH3x
- Maximum Operating Temperature :
- + 175 C
- Speed :
- Fast Recovery =< 500ns, > 200mA (Io)
- HTS Code :
- 8541.10.00.80
- Brand :
- TAIWAN SEMICONDUCTOR
- Peak Forward Voltage (V) :
- 0.9
- Supplier Device Package :
- DO-214AB (SMC)
- Package / Case :
- DO-214AB-2
- Terminal Position :
- Dual
- Number of Phases :
- 1
- Reverse Recovery Time (trr) :
- 20 ns
- Lead Shape :
- Inward L-Lead
- JESD-30 Code :
- R-PDSO-C2
- Number of Terminals :
- 2
- RoHS Status :
- Yes with exemptions
- Lifecycle Status :
- Production (Last Updated: 2 years ago)
- Manufacturer Lifecycle Status :
- ACTIVE (Last Updated: 2 years ago)
- Diode Element Material :
- SILICON
- Capacitance @ Vr, F :
- 45pF @ 4V, 1MHz
- Recovery Time :
- 20 ns
- Output Current-Max :
- 3 A
- Package Shape :
- RECTANGULAR
- Number of Elements :
- 1
- Voltage - DC Reverse (Vr) (Max) :
- 100 V
- Minimum Operating Temperature :
- - 55 C
- Application :
- EFFICIENCY
- RoHS :
- Compliant
- Configuration :
- Single
- Maximum Operating Temperature (°C) :
- 175
- ECCN Code :
- EAR99
- Reach Compliance Code :
- Compliant
- Current - Average Rectified (Io) :
- 3A
- Datasheets
- ESH3B R6
Standard 45pF @ 4V, 1MHz SILICON DUAL Tape and Reel DO-214AB-2
ESH3B R6 Overview
In the datasheets, 0.9 is stated as the peak forward voltage.A continuous forward current of 3 is the maximum consumption of this device.RF diode is necessary to operate the device at a DC reverse voltage below 100.This device can read current voltages up to 3 A.
ESH3B R6 Features
the forward peak voltage is 0.9
a maximum output current voltage of 3 A
ESH3B R6 Applications
There are a lot of Taiwan Semiconductor
ESH3B R6 applications of RF diodes.
- Radar systems for industrial use
- Ultra high-speed switching
- Clamping circuits
- Diode ring mixer
- RF detector
- RF voltage doubler
- Wearables
- Smart metering
- Set top boxes
- RF attenuators and switches
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