EPC2212
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- Mfr.Part #
- EPC2212
- Manufacturer
- EPC
- Package / Case
- Die
- Datasheet
- Download
- Description
- GANFET N-CH 100V 18A DIE
- Stock
- 172,812
- In Stock ：
- 172,812
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- Manufacturer :
- EPC
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 13.5mOhm @ 11A, 5V
- Packaging :
- Tape and Reel (TR)
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Vgs(th) (Max) @ Id :
- 2.5V @ 3mA
- Operating Temperature :
- -40°C~150°C TJ
- Series :
- eGaN®
- Drain to Source Voltage (Vdss) :
- 100V
- Vgs (Max) :
- +6V, -4V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Factory Lead Time :
- 14 Weeks
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 4nC @ 5V
- Package / Case :
- Die
- Input Capacitance (Ciss) (Max) @ Vds :
- 407pF @ 50V
- Supplier Device Package :
- Die
- Current - Continuous Drain (Id) @ 25°C :
- 18A Ta
- Datasheets
- EPC2212
N-Channel Tape & Reel (TR) 13.5mOhm @ 11A, 5V +6V, -4V 407pF @ 50V 4nC @ 5V 100V Die
EPC2212 Overview
The maximum input capacitance of this device is 407pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (5V), this device helps reduce its power consumption.
EPC2212 Features
a 100V drain to source voltage (Vdss)
EPC2212 Applications
There are a lot of EPC
EPC2212 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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Manufacturer related products
Catalog related products
Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| EPC200-CSP5 | EPC | 694 | SENSOR PHOTODIODE 850NM |
| EPC2001 | EPC | 26,899 | GANFET N-CH 100V 25A DIE OUTLINE |
| EPC2001C | EPC | 19,957 | GANFET N-CH 100V 36A DIE OUTLINE |
| EPC2007 | EPC | 8,316 | GANFET N-CH 100V 6A DIE OUTLINE |
| EPC2007C | EPC | 30,185 | GANFET N-CH 100V 6A DIE OUTLINE |
| EPC2010 | EPC | 8,153 | GANFET N-CH 200V 12A DIE |
| EPC2010C | EPC | 2,001 | GANFET N-CH 200V 22A DIE OUTLINE |
| EPC2012 | EPC | 26,733 | GANFET N-CH 200V 3A DIE |
| EPC2012C | EPC | 49 | GANFET N-CH 200V 5A DIE OUTLINE |
| EPC2014 | EPC | 11,179 | GANFET N-CH 40V 10A DIE OUTLINE |
| EPC2014C | EPC | 3,419 | GANFET N-CH 40V 10A DIE OUTLINE |
| EPC2015 | EPC | 3,665 | GANFET N-CH 40V 33A DIE OUTLINE |
| EPC2015C | EPC | 11,150 | GANFET N-CH 40V 53A DIE |
| EPC2016 | EPC | 29,638 | GANFET N-CH 100V 11A DIE |
| EPC2016C | EPC | 4,674 | GANFET N-CH 100V 18A DIE |
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