EKV550
- Mfr.Part #
- EKV550
- Manufacturer
- Sanken Electric Co., Ltd.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 50V 50A TO220
- Stock
- 48,974
- In Stock :
- 48,974
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- Manufacturer :
- Sanken Electric Co., Ltd.
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 12 Weeks
- Manufacturer :
- Sanken Electric Co Ltd
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 15m Ω @ 25A, 10V
- Pbfree Code :
- yes
- HTS Code :
- 8541.29.00.95
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Through Hole
- DS Breakdown Voltage-Min :
- 50V
- Mounting Type :
- Through Hole
- Packaging :
- Bulk
- Product Status :
- Obsolete
- JESD-30 Code :
- R-PSFM-T3
- Package / Case :
- TO-220-3
- JEDEC-95 Code :
- TO-220AB
- Drain-source On Resistance-Max :
- 0.015Ohm
- Power Dissipation-Max :
- 85W Tc
- Polarity/Channel Type :
- N-Channel
- FET Feature :
- --
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 2000pF @ 10V
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- Unknown
- Power Dissipation (Max) :
- 85W (Tc)
- FET Type :
- N-Channel
- Package :
- Bulk
- Series :
- --
- Number of Terminals :
- 3
- Surface Mount :
- No
- Configuration :
- Single
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Terminal Form :
- THROUGH-HOLE
- Drain to Source Voltage (Vdss) :
- 50V
- Terminal Position :
- Single
- Number of Elements :
- 1
- Supplier Device Package :
- TO-220
- Avalanche Energy Rating (Eas) :
- 150 mJ
- Qualification Status :
- Not Qualified
- Vgs (Max) :
- ±20V
- RoHS Status :
- RoHS Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 50A Ta
- Transistor Application :
- SWITCHING
- Published :
- 2007
- Pulsed Drain Current-Max (IDM) :
- 150 A
- Pin Count :
- 3
- Vgs(th) (Max) @ Id :
- 4.2V @ 250μA
- Package Shape :
- RECTANGULAR
- Continuous Drain Current (ID) :
- 50A
- Operating Temperature :
- 150°C TJ
- Datasheets
- EKV550
N-Channel Bulk 15m Ω @ 25A, 10V ±20V 2000pF @ 10V 50V TO-220-3
EKV550 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 150 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2000pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is a peak drain current of 150 A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 50V, it should remain above the 50V level.The transistor must receive a 50V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
EKV550 Features
the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 50A
based on its rated peak drain current 150 A.
a 50V drain to source voltage (Vdss)
EKV550 Applications
There are a lot of Sanken
EKV550 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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