EGP30D

Manufacturer :

onsemi

Product Category :

Diodes - Rectifiers - Single

Radiation Hardening :

No

Element Configuration :

Single

ECCN Code :

EAR99

Lead Free :

Lead Free

Max Repetitive Reverse Voltage (Vrrm) :

200V

Voltage - Rated DC :

200V

Application :

EFFICIENCY

Reverse Recovery Time :

50 ns

Package / Case :

DO-201AD, Axial

Number of Pins :

2

Weight :

360mg

JESD-609 Code :

e3

Forward Voltage :

950mV

Max Reverse Voltage (DC) :

200V

Output Current :

3A

Power Dissipation :

6.25W

Capacitance :

95pF

Diode Element Material :

SILICON

HTS Code :

8541.10.00.80

Current - Reverse Leakage @ Vr :

5µA @ 200V

Max Forward Surge Current (Ifsm) :

125A

Peak Non-Repetitive Surge Current :

125A

Terminal Finish :

Tin (Sn)

Current Rating :

3A

Terminal Form :

Wire

Peak Reverse Current :

5μA

Min Operating Temperature :

-65°C

RoHS Status :

ROHS3 Compliant

Capacitance @ Vr, F :

95pF @ 4V 1MHz

Diode Type :

Standard

Number of Phases :

1

Mounting Type :

Through Hole

Max Surge Current :

125A

Pbfree Code :

yes

Case Connection :

Isolated

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Max Operating Temperature :

150°C

Base Part Number :

EGP30D

Number of Terminations :

2

Forward Current :

3A

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Forward (Vf) (Max) @ If :

950mV @ 3A

Number of Elements :

1

Published :

2016

Reverse Voltage :

200V

Average Rectified Current :

3A

Recovery Time :

50 ns

Mount :

Through Hole

Packaging :

Tape and Reel (TR)

Factory Lead Time :

10 Weeks

Operating Temperature - Junction :

-65°C~150°C