EGP30B

Manufacturer :

onsemi

Product Category :

Diodes - Rectifiers - Single

Forward Voltage :

950mV

Factory Lead Time :

10 Weeks

Recovery Time :

50 ns

Case Connection :

Isolated

Peak Non-Repetitive Surge Current :

125A

Pbfree Code :

yes

Terminal Form :

Wire

Max Forward Surge Current (Ifsm) :

125A

Min Operating Temperature :

-65°C

Max Reverse Voltage (DC) :

100V

Max Operating Temperature :

150°C

Average Rectified Current :

3A

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Weight :

360mg

Diode Type :

Standard

Operating Temperature - Junction :

-65°C~150°C

Diameter :

5.6mm

ECCN Code :

EAR99

Power Dissipation :

6.25W

Diode Element Material :

SILICON

Number of Phases :

1

Number of Pins :

2

Published :

2004

Current Rating :

3A

Mounting Type :

Through Hole

Capacitance @ Vr, F :

95pF @ 4V 1MHz

Peak Reverse Current :

5μA

Capacitance :

95pF

Max Surge Current :

125A

Element Configuration :

Single

Terminal Finish :

Tin (Sn)

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Voltage - Rated DC :

100V

HTS Code :

8541.10.00.80

Reverse Recovery Time :

50 ns

Base Part Number :

EGP30B

Mount :

Through Hole

Current - Reverse Leakage @ Vr :

5µA @ 100V

Package / Case :

DO-201AD, Axial

Number of Elements :

1

Max Repetitive Reverse Voltage (Vrrm) :

100V

Number of Terminations :

2

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Natural Thermal Resistance :

20 °C/W

Application :

EFFICIENCY

Reverse Voltage :

100V

Output Current :

3A

Height :

9.5mm

JESD-609 Code :

e3

Forward Current :

3A

Voltage - Forward (Vf) (Max) @ If :

950mV @ 3A

Packaging :

Tape and Reel (TR)