DSS9110Y-7
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- Mfr.Part #
- DSS9110Y-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- TRANS PNP 100V 1A SOT363
- Stock
- 31
- In Stock ：
- 31
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 6
- Transistor Type :
- PNP
- Factory Lead Time :
- 16 Weeks
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- -5V
- Max Power Dissipation :
- 625mW
- Current - Collector Cutoff (Max) :
- 100nA
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Power - Max :
- 625mW
- Collector Emitter Breakdown Voltage :
- 100V
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 100mA, 1A
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Max Collector Current :
- 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 5V
- Number of Terminations :
- 6
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- -120V
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Saturation Voltage :
- -120mV
- Mount :
- Surface Mount
- Number of Pins :
- 6
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 320mV
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Published :
- 2010
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Dual
- Transition Frequency :
- 100MHz
- Max Breakdown Voltage :
- 100V
- Gain Bandwidth Product :
- 100MHz
- Continuous Collector Current :
- -1A
- Polarity/Channel Type :
- PNP
- Datasheets
- DSS9110Y-7
PNP -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Surface Mount
DSS9110Y-7 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 150 @ 500mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -120mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 320mV @ 100mA, 1A.Single BJT transistor is recommended to keep the continuous collector voltage at -1A in order to achieve high efficiency.The emitter base voltage can be kept at -5V for high efficiency.The part has a transition frequency of 100MHz.The breakdown input voltage is 100V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
DSS9110Y-7 Features
the DC current gain for this device is 150 @ 500mA 5V
a collector emitter saturation voltage of -120mV
the vce saturation(Max) is 320mV @ 100mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
DSS9110Y-7 Applications
There are a lot of Diodes Incorporated
DSS9110Y-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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