DN3765K4-G
- Mfr.Part #
- DN3765K4-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 300MA TO252-3
- Stock
- 46,367
- In Stock :
- 46,367
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Product Type :
- MOSFET
- Base Product Number :
- DN3765
- Channel Mode :
- Depletion
- Fall Time (Typ) :
- 100 ns
- Power Dissipation-Max :
- 2.5W Ta
- Terminal Position :
- Single
- Operating Mode :
- Depletion Mode
- Current - Continuous Drain (Id) @ 25°C :
- 300mA Tj
- Minimum Operating Temperature :
- - 55 C
- Surface Mount :
- yes
- RoHS Status :
- ROHS3 Compliant
- Brand :
- Microchip Technology / Atmel
- Mounting Type :
- Surface Mount
- Continuous Drain Current Id :
- 300
- Height :
- 2.39mm
- Qualification Status :
- Not Qualified
- Maximum Operating Temperature :
- + 150 C
- Number of Terminations :
- 2
- Drain-source On Resistance-Max :
- 8Ohm
- JEDEC-95 Code :
- TO-252
- Width :
- 6.1mm
- Manufacturer :
- Microchip
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- Gull wing
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- Product Category :
- MOSFET
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Input Capacitance (Ciss) (Max) @ Vds :
- 825pF @ 25V
- Reach Compliance Code :
- Compliant
- Weight :
- 3.949996g
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Packaging :
- Tape and Reel (TR)
- DS Breakdown Voltage-Min :
- 650 V
- Mount :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 650V
- Transistor Application :
- SWITCHING
- Series :
- --
- Case Connection :
- DRAIN
- REACH SVHC :
- No SVHC
- Supplier Device Package :
- TO-252-3
- Polarity/Channel Type :
- N-Channel
- Transistor Type :
- 1 N-Channel
- Rds On (Max) @ Id, Vgs :
- 8 Ω @ 150mA, 0V
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 300mA
- FET Feature :
- Depletion Mode
- Factory Lead Time :
- 8 Weeks
- Power Dissipation (Max) :
- 2.5W (Ta)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Terminal Finish :
- Matte Tin (Sn)
- Vgs(th) (Max) @ Id :
- --
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Package Shape :
- RECTANGULAR
- JESD-30 Code :
- R-PSSO-G2
- Pulsed Drain Current-Max (IDM) :
- 0.5A
- Mounting Style :
- SMD/SMT
- Turn-Off Delay Time :
- 75 ns
- Element Configuration :
- Single
- Number of Terminals :
- 2
- Length :
- 6.73mm
- Turn On Delay Time :
- 50 ns
- Subcategory :
- MOSFETs
- Number of Elements :
- 1
- HTS Code :
- 8541.90.00.00
- ECCN Code :
- EAR99
- Transistor Polarity :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Rise Time :
- 75ns
- Channel Type :
- N
- Published :
- 2008
- Product Status :
- Active
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Configuration :
- Single
- Lead Free :
- Lead Free
- Number of Channels :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- RoHS :
- Details
- Power Dissipation :
- 2.5W
- JESD-609 Code :
- e3
- Drain to Source Breakdown Voltage :
- 650V
- Datasheets
- DN3765K4-G
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N-Channel Tape & Reel (TR) 8 Ω @ 150mA, 0V ±20V 825pF @ 25V 650V TO-252-3, DPak (2 Leads + Tab), SC-63
DN3765K4-G Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 825pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 300mA amps.In this device, the drain-source breakdown voltage is 650V and VGS=650V, so the drain-source breakdown voltage is 650V in this case.It is [75 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 0.5A.A turn-on delay time of 50 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 650 V to maintain normal operation.To operate this transistor, you will need a 650V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (0V).
DN3765K4-G Features
a continuous drain current (ID) of 300mA
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 0.5A.
a 650V drain to source voltage (Vdss)
DN3765K4-G Applications
There are a lot of Microchip Technology
DN3765K4-G applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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