DN3765K4-G

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Mfr.Part #
DN3765K4-G
Manufacturer
Microchip Technology
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 650V 300MA TO252-3
Stock
46,367
In Stock :
46,367

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Base Product Number :
DN3765
RoHS Status :
ROHS3 Compliant
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Weight :
3.949996g
RoHS :
Details
JEDEC-95 Code :
TO-252
Power Dissipation :
2.5W
Mounting Style :
SMD/SMT
DS Breakdown Voltage-Min :
650 V
Number of Channels :
1
Transistor Element Material :
SILICON
Gate to Source Voltage (Vgs) :
20V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Case Connection :
DRAIN
Element Configuration :
Single
Supplier Device Package :
TO-252-3
Polarity/Channel Type :
N-Channel
Surface Mount :
yes
Terminal Finish :
Matte Tin (Sn)
Operating Mode :
Depletion Mode
Terminal Position :
Single
Transistor Application :
SWITCHING
FET Type :
N-Channel
Series :
--
Vgs(th) (Max) @ Id :
--
Peak Reflow Temperature (Cel) :
260
REACH SVHC :
No SVHC
Product Status :
Active
Channel Mode :
Depletion
Turn-Off Delay Time :
75 ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Width :
6.1mm
Published :
2008
Length :
6.73mm
Continuous Drain Current Id :
300
Drain to Source Voltage (Vdss) :
650V
Fall Time (Typ) :
100 ns
Configuration :
Single
Minimum Operating Temperature :
- 55 C
Number of Terminals :
2
JESD-30 Code :
R-PSSO-G2
Subcategory :
MOSFETs
ECCN Code :
EAR99
Turn On Delay Time :
50 ns
Terminal Form :
Gull wing
Number of Pins :
3
Operating Temperature :
-55°C~150°C TJ
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
FET Feature :
Depletion Mode
JESD-609 Code :
e3
Transistor Polarity :
N-Channel
Qualification Status :
Not Qualified
HTS Code :
8541.90.00.00
Rds On (Max) @ Id, Vgs :
8 Ω @ 150mA, 0V
Drain-source On Resistance-Max :
8Ohm
Power Dissipation-Max :
2.5W Ta
Reach Compliance Code :
Compliant
Maximum Operating Temperature :
+ 150 C
Package Shape :
RECTANGULAR
Drain to Source Breakdown Voltage :
650V
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Rise Time :
75ns
Packaging :
Tape and Reel (TR)
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
825pF @ 25V
Channel Type :
N
Manufacturer :
Microchip
Product Type :
MOSFET
Mount :
Surface Mount
Continuous Drain Current (ID) :
300mA
Height :
2.39mm
Brand :
Microchip Technology / Atmel
Factory Lead Time :
8 Weeks
Transistor Type :
1 N-Channel
Product Category :
MOSFET
Number of Terminations :
2
Mounting Type :
Surface Mount
Lead Free :
Lead Free
Drive Voltage (Max Rds On,Min Rds On) :
0V
Number of Elements :
1
Current - Continuous Drain (Id) @ 25°C :
300mA Tj
Power Dissipation (Max) :
2.5W (Ta)
Pulsed Drain Current-Max (IDM) :
0.5A
Datasheets
DN3765K4-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology DN3765K4-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Terminations:2, Mounting Type:Surface Mount, DN3765K4-G pinout, DN3765K4-G datasheet PDF, DN3765K4-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology DN3765K4-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology DN3765K4-G


N-Channel Tape & Reel (TR) 8 Ω @ 150mA, 0V ±20V 825pF @ 25V 650V TO-252-3, DPak (2 Leads + Tab), SC-63

DN3765K4-G Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 825pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 300mA amps.In this device, the drain-source breakdown voltage is 650V and VGS=650V, so the drain-source breakdown voltage is 650V in this case.It is [75 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 0.5A.A turn-on delay time of 50 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 650 V to maintain normal operation.To operate this transistor, you will need a 650V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (0V).

DN3765K4-G Features


a continuous drain current (ID) of 300mA
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 0.5A.
a 650V drain to source voltage (Vdss)


DN3765K4-G Applications


There are a lot of Microchip Technology
DN3765K4-G applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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