DN3765K4-G

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Mfr.Part #
DN3765K4-G
Manufacturer
Microchip Technology
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 650V 300MA TO252-3
Stock
46,367
In Stock :
46,367

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
N-Channel
Product Type :
MOSFET
Base Product Number :
DN3765
Channel Mode :
Depletion
Fall Time (Typ) :
100 ns
Power Dissipation-Max :
2.5W Ta
Terminal Position :
Single
Operating Mode :
Depletion Mode
Current - Continuous Drain (Id) @ 25°C :
300mA Tj
Minimum Operating Temperature :
- 55 C
Surface Mount :
yes
RoHS Status :
ROHS3 Compliant
Brand :
Microchip Technology / Atmel
Mounting Type :
Surface Mount
Continuous Drain Current Id :
300
Height :
2.39mm
Qualification Status :
Not Qualified
Maximum Operating Temperature :
+ 150 C
Number of Terminations :
2
Drain-source On Resistance-Max :
8Ohm
JEDEC-95 Code :
TO-252
Width :
6.1mm
Manufacturer :
Microchip
Operating Temperature :
-55°C~150°C TJ
Terminal Form :
Gull wing
Drive Voltage (Max Rds On,Min Rds On) :
0V
Product Category :
MOSFET
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Input Capacitance (Ciss) (Max) @ Vds :
825pF @ 25V
Reach Compliance Code :
Compliant
Weight :
3.949996g
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Packaging :
Tape and Reel (TR)
DS Breakdown Voltage-Min :
650 V
Mount :
Surface Mount
Drain to Source Voltage (Vdss) :
650V
Transistor Application :
SWITCHING
Series :
--
Case Connection :
DRAIN
REACH SVHC :
No SVHC
Supplier Device Package :
TO-252-3
Polarity/Channel Type :
N-Channel
Transistor Type :
1 N-Channel
Rds On (Max) @ Id, Vgs :
8 Ω @ 150mA, 0V
Transistor Element Material :
SILICON
Continuous Drain Current (ID) :
300mA
FET Feature :
Depletion Mode
Factory Lead Time :
8 Weeks
Power Dissipation (Max) :
2.5W (Ta)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Terminal Finish :
Matte Tin (Sn)
Vgs(th) (Max) @ Id :
--
Vgs (Max) :
±20V
Gate to Source Voltage (Vgs) :
20V
Package Shape :
RECTANGULAR
JESD-30 Code :
R-PSSO-G2
Pulsed Drain Current-Max (IDM) :
0.5A
Mounting Style :
SMD/SMT
Turn-Off Delay Time :
75 ns
Element Configuration :
Single
Number of Terminals :
2
Length :
6.73mm
Turn On Delay Time :
50 ns
Subcategory :
MOSFETs
Number of Elements :
1
HTS Code :
8541.90.00.00
ECCN Code :
EAR99
Transistor Polarity :
N-Channel
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Rise Time :
75ns
Channel Type :
N
Published :
2008
Product Status :
Active
Number of Pins :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Configuration :
Single
Lead Free :
Lead Free
Number of Channels :
1
Peak Reflow Temperature (Cel) :
260
RoHS :
Details
Power Dissipation :
2.5W
JESD-609 Code :
e3
Drain to Source Breakdown Voltage :
650V
Datasheets
DN3765K4-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology DN3765K4-G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:2, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Pins:3, Number of Channels:1, DN3765K4-G pinout, DN3765K4-G datasheet PDF, DN3765K4-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology DN3765K4-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology DN3765K4-G


N-Channel Tape & Reel (TR) 8 Ω @ 150mA, 0V ±20V 825pF @ 25V 650V TO-252-3, DPak (2 Leads + Tab), SC-63

DN3765K4-G Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 825pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 300mA amps.In this device, the drain-source breakdown voltage is 650V and VGS=650V, so the drain-source breakdown voltage is 650V in this case.It is [75 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 0.5A.A turn-on delay time of 50 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 650 V to maintain normal operation.To operate this transistor, you will need a 650V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (0V).

DN3765K4-G Features


a continuous drain current (ID) of 300mA
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 0.5A.
a 650V drain to source voltage (Vdss)


DN3765K4-G Applications


There are a lot of Microchip Technology
DN3765K4-G applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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