DN3765K4-G
- Mfr.Part #
- DN3765K4-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 300MA TO252-3
- Stock
- 46,367
- In Stock :
- 46,367
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Base Product Number :
- DN3765
- RoHS Status :
- ROHS3 Compliant
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Weight :
- 3.949996g
- RoHS :
- Details
- JEDEC-95 Code :
- TO-252
- Power Dissipation :
- 2.5W
- Mounting Style :
- SMD/SMT
- DS Breakdown Voltage-Min :
- 650 V
- Number of Channels :
- 1
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Element Configuration :
- Single
- Supplier Device Package :
- TO-252-3
- Polarity/Channel Type :
- N-Channel
- Surface Mount :
- yes
- Terminal Finish :
- Matte Tin (Sn)
- Operating Mode :
- Depletion Mode
- Terminal Position :
- Single
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Series :
- --
- Vgs(th) (Max) @ Id :
- --
- Peak Reflow Temperature (Cel) :
- 260
- REACH SVHC :
- No SVHC
- Product Status :
- Active
- Channel Mode :
- Depletion
- Turn-Off Delay Time :
- 75 ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Width :
- 6.1mm
- Published :
- 2008
- Length :
- 6.73mm
- Continuous Drain Current Id :
- 300
- Drain to Source Voltage (Vdss) :
- 650V
- Fall Time (Typ) :
- 100 ns
- Configuration :
- Single
- Minimum Operating Temperature :
- - 55 C
- Number of Terminals :
- 2
- JESD-30 Code :
- R-PSSO-G2
- Subcategory :
- MOSFETs
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 50 ns
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- FET Feature :
- Depletion Mode
- JESD-609 Code :
- e3
- Transistor Polarity :
- N-Channel
- Qualification Status :
- Not Qualified
- HTS Code :
- 8541.90.00.00
- Rds On (Max) @ Id, Vgs :
- 8 Ω @ 150mA, 0V
- Drain-source On Resistance-Max :
- 8Ohm
- Power Dissipation-Max :
- 2.5W Ta
- Reach Compliance Code :
- Compliant
- Maximum Operating Temperature :
- + 150 C
- Package Shape :
- RECTANGULAR
- Drain to Source Breakdown Voltage :
- 650V
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Rise Time :
- 75ns
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 825pF @ 25V
- Channel Type :
- N
- Manufacturer :
- Microchip
- Product Type :
- MOSFET
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 300mA
- Height :
- 2.39mm
- Brand :
- Microchip Technology / Atmel
- Factory Lead Time :
- 8 Weeks
- Transistor Type :
- 1 N-Channel
- Product Category :
- MOSFET
- Number of Terminations :
- 2
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 300mA Tj
- Power Dissipation (Max) :
- 2.5W (Ta)
- Pulsed Drain Current-Max (IDM) :
- 0.5A
- Datasheets
- DN3765K4-G
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N-Channel Tape & Reel (TR) 8 Ω @ 150mA, 0V ±20V 825pF @ 25V 650V TO-252-3, DPak (2 Leads + Tab), SC-63
DN3765K4-G Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 825pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 300mA amps.In this device, the drain-source breakdown voltage is 650V and VGS=650V, so the drain-source breakdown voltage is 650V in this case.It is [75 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 0.5A.A turn-on delay time of 50 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 650 V to maintain normal operation.To operate this transistor, you will need a 650V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (0V).
DN3765K4-G Features
a continuous drain current (ID) of 300mA
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 0.5A.
a 650V drain to source voltage (Vdss)
DN3765K4-G Applications
There are a lot of Microchip Technology
DN3765K4-G applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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