DN1509N8-G

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Mfr.Part #
DN1509N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET N-CH 90V 360MA TO243AA
Stock
2,620
In Stock :
2,620

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Polarity/Channel Type :
N-Channel
Power Dissipation-Max (Abs) :
1.6 W
JESD-609 Code :
e3
Transistor Polarity :
N-Channel
Fall Time (Typ) :
16 ns
DS Breakdown Voltage-Min :
90 V
HTS Code :
8541.90.00.00
Drain-source On Resistance-Max :
6Ohm
Brand :
Microchip Technology / Atmel
Mount :
Surface Mount
Number of Channels :
1
Power Dissipation-Max :
1.6W Ta
JEDEC-95 Code :
TO-243AA
Height :
1.6mm
Channel Type :
N
Base Product Number :
DN1509N8
Maximum Operating Temperature :
+ 150 C
Packaging :
Tape and Reel (TR)
Rds On (Max) @ Id, Vgs :
6 Ω @ 200mA, 0V
Current - Continuous Drain (Id) @ 25°C :
360mA Tj
RoHS :
Details
Time@Peak Reflow Temperature-Max (s) :
40
Operating Temperature :
-55°C~150°C TJ
Lead Free :
Lead Free
Weight :
52.786812mg
Product :
MOSFET Small Signal
Minimum Operating Temperature :
- 55 C
Peak Reflow Temperature (Cel) :
260
Terminal Position :
Single
Continuous Drain Current (ID) :
360mA
Input Capacitance (Ciss) (Max) @ Vds :
150pF @ 25V
REACH SVHC :
No SVHC
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Vgs (Max) :
±20V
Drive Voltage (Max Rds On,Min Rds On) :
0V
Terminal Form :
Flat
Length :
4.6mm
Width :
2.6mm
Rise Time :
16ns
Power Dissipation :
1.6W
Continuous Drain Current Id :
360
Reach Compliance Code :
Compliant
Supplier Device Package :
TO-243AA (SOT-89)
Element Configuration :
Single
ECCN Code :
EAR99
Mounting Type :
Surface Mount
JESD-30 Code :
R-PSSO-F3
Transistor Element Material :
SILICON
Power Dissipation (Max) :
1.6W (Ta)
Gate to Source Voltage (Vgs) :
20V
Radiation Hardening :
No
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Series :
--
Number of Elements :
1
Channel Mode :
Depletion
Transistor Application :
SWITCHING
Manufacturer :
Microchip
Product Category :
MOSFET
Transistor Type :
1 N-Channel
Turn On Delay Time :
12 ns
Mounting Style :
SMD/SMT
Number of Terminals :
3
FET Feature :
Depletion Mode
Number of Terminations :
3
FET Type :
N-Channel
Qualification Status :
Not Qualified
Case Connection :
DRAIN
Published :
2005
Feedback Cap-Max (Crss) :
15 pF
Vgs(th) (Max) @ Id :
--
Surface Mount :
yes
Product Type :
MOSFET
Package Shape :
RECTANGULAR
Turn-Off Delay Time :
15 ns
Product Status :
Active
Package / Case :
TO-243AA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Voltage (Vdss) :
90V
Terminal Finish :
Matte Tin (Sn)
Number of Pins :
3
Drain to Source Breakdown Voltage :
90V
Configuration :
Single
RoHS Status :
ROHS3 Compliant
Operating Mode :
ENHANCEMENT MODE
Factory Lead Time :
6 Weeks
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology DN1509N8-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:3, Package / Case:TO-243AA, Number of Pins:3, DN1509N8-G pinout, DN1509N8-G datasheet PDF, DN1509N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology DN1509N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology DN1509N8-G


N-Channel Tape & Reel (TR) 6 Ω @ 200mA, 0V ±20V 150pF @ 25V 90V TO-243AA

DN1509N8-G Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 150pF @ 25V.This device conducts a continuous drain current (ID) of 360mA, which is the maximum continuous current transistor can conduct.Using VGS=90V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 90V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 15 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 12 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 90 V.This transistor requires a drain-source voltage (Vdss) of 90V.In order to reduce power consumption, this device uses a drive voltage of 0V volts (0V).

DN1509N8-G Features


a continuous drain current (ID) of 360mA
a drain-to-source breakdown voltage of 90V voltage
the turn-off delay time is 15 ns
a 90V drain to source voltage (Vdss)


DN1509N8-G Applications


There are a lot of Microchip Technology
DN1509N8-G applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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