DMT5015LFDF-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

NO LEAD

Turn On Delay Time :

2.8 ns

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

50V

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

16V

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Power Dissipation-Max :

820mW Ta

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

6

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2013

DS Breakdown Voltage-Min :

50V

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

9.1A Ta

Package / Case :

6-UDFN Exposed Pad

Turn-Off Delay Time :

10.6 ns

JESD-30 Code :

S-PDSO-N6

Factory Lead Time :

22 Weeks

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Vgs (Max) :

±16V

Fall Time (Typ) :

2.7 ns

Vgs(th) (Max) @ Id :

2V @ 250μA

JESD-609 Code :

e4

Element Configuration :

Single

Continuous Drain Current (ID) :

9.1A

Rds On (Max) @ Id, Vgs :

15m Ω @ 8A, 10V

Mount :

Surface Mount

Mounting Type :

Surface Mount

Resistance :

15mOhm

Rise Time :

5.1ns

Input Capacitance (Ciss) (Max) @ Vds :

902.7pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ