DMT5015LFDF-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

5.1ns

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Turn-Off Delay Time :

10.6 ns

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

15m Ω @ 8A, 10V

Fall Time (Typ) :

2.7 ns

Published :

2013

Gate to Source Voltage (Vgs) :

16V

Element Configuration :

Single

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Number of Channels :

1

JESD-30 Code :

S-PDSO-N6

Vgs (Max) :

±16V

Vgs(th) (Max) @ Id :

2V @ 250μA

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Case Connection :

DRAIN

FET Type :

N-Channel

Package / Case :

6-UDFN Exposed Pad

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

50V

ECCN Code :

EAR99

JESD-609 Code :

e4

Current - Continuous Drain (Id) @ 25°C :

9.1A Ta

Drain to Source Voltage (Vdss) :

50V

Input Capacitance (Ciss) (Max) @ Vds :

902.7pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Resistance :

15mOhm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

820mW Ta

Continuous Drain Current (ID) :

9.1A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

NO LEAD

Factory Lead Time :

22 Weeks

Turn On Delay Time :

2.8 ns

Number of Terminations :

6

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED