DMPH6050SK3Q-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2015

Number of Terminations :

2

Terminal Position :

Single

Vgs(th) (Max) @ Id :

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1377pF @ 30V

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

7.2A

Additional Feature :

High Reliability

Number of Elements :

1

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

40A

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Continuous Drain Current (ID) :

23.6A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current - Continuous Drain (Id) @ 25°C :

7.2A Ta 23.6A Tc

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

60V

Avalanche Energy Rating (Eas) :

31 mJ

Rds On (Max) @ Id, Vgs :

50m Ω @ 7A, 10V

DS Breakdown Voltage-Min :

60V

Case Connection :

DRAIN

Reference Standard :

AEC-Q101

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.07Ohm

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Factory Lead Time :

8 Weeks

FET Type :

P-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

1.9W Ta

RoHS Status :

ROHS3 Compliant