DMP45H4D9HK3-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

450V

Number of Elements :

1

Vgs(th) (Max) @ Id :

5V @ 250μA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge (Qg) (Max) @ Vgs :

13.7nC @ 10V

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

187 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

4.5A

Operating Temperature :

-55°C~150°C TJ

FET Type :

P-Channel

Reach Compliance Code :

not_compliant

Drain Current-Max (Abs) (ID) :

3A

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

4.7A Tc

Terminal Position :

Single

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

104W Tc

Terminal Finish :

Matte Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

564pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Factory Lead Time :

23 Weeks

DS Breakdown Voltage-Min :

450V

Rds On (Max) @ Id, Vgs :

4.9 Ω @ 1.05A, 10V

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Vgs (Max) :

±30V