DMP45H4D9HJ3

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

4.6A Tc

Surface Mount :

No

JESD-30 Code :

R-PSIP-T3

Avalanche Energy Rating (Eas) :

187 mJ

Reach Compliance Code :

not_compliant

Gate Charge (Qg) (Max) @ Vgs :

13.7nC @ 10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

450V

Number of Terminations :

3

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

4.9 Ω @ 1.05A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

547pF @ 25V

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

Factory Lead Time :

17 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

104W Tc

Terminal Finish :

Matte Tin (Sn)

Pulsed Drain Current-Max (IDM) :

22.4A

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

FET Type :

P-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Packaging :

Tube

DS Breakdown Voltage-Min :

450V

Drain Current-Max (Abs) (ID) :

4.6A

Package / Case :

TO-251-3, IPak, Short Leads

Moisture Sensitivity Level (MSL) :

1 (Unlimited)