DMNH6042SPDQ-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

6

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Voltage (Vdss) :

60V

Drain-source On Resistance-Max :

0.05Ohm

Gate Charge (Qg) (Max) @ Vgs :

8.8nC @ 10V

Rds On (Max) @ Id, Vgs :

50m Ω @ 5.1A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

60V

Current - Continuous Drain (Id) @ 25°C :

5.7A Ta 24A Tc

Continuous Drain Current (ID) :

24A

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Published :

2016

Vgs(th) (Max) @ Id :

3V @ 250µA

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

5.7A

Operating Temperature :

-55°C~175°C TJ

Package / Case :

8-PowerTDFN

Vgs (Max) :

±20V

Terminal Form :

Flat

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn)

Additional Feature :

High Reliability

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Input Capacitance (Ciss) (Max) @ Vds :

584pF @ 25V

Series :

Automotive, AEC-Q101

JESD-30 Code :

R-PDSO-F6

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

32A

Avalanche Energy Rating (Eas) :

65 mJ

Power Dissipation-Max :

1.2W Ta

Terminal Position :

Dual

Mount :

Surface Mount

FET Type :

N-Channel

Number of Elements :

2

JESD-609 Code :

e3

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

17 Weeks

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED