DMNH6042SPD-13
- Mfr.Part #
- DMNH6042SPD-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 25A PWRDI5060
- Stock
- 32,203
- In Stock :
- 32,203
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Configuration :
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Terminal Form :
- Flat
- Package / Case :
- 8-PowerTDFN
- Power Dissipation-Max :
- 1.2W Ta
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Case Connection :
- DRAIN
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Additional Feature :
- High Reliability
- Operating Temperature :
- -55°C~175°C TJ
- Drain-source On Resistance-Max :
- 0.05Ohm
- JESD-30 Code :
- R-PDSO-F6
- Terminal Finish :
- Matte Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 2
- Current - Continuous Drain (Id) @ 25°C :
- 5.7A Ta 24A Tc
- Number of Terminations :
- 6
- Pulsed Drain Current-Max (IDM) :
- 32A
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 17 Weeks
- Mount :
- Surface Mount
- Avalanche Energy Rating (Eas) :
- 65 mJ
- Continuous Drain Current (ID) :
- 24A
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain to Source Voltage (Vdss) :
- 60V
- FET Type :
- N-Channel
- Number of Pins :
- 8
- Rds On (Max) @ Id, Vgs :
- 50m Ω @ 5.1A, 10V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- DS Breakdown Voltage-Min :
- 60V
- Gate Charge (Qg) (Max) @ Vgs :
- 8.8nC @ 10V
- Published :
- 2016
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 584pF @ 25V
- ECCN Code :
- EAR99
- Drain Current-Max (Abs) (ID) :
- 5.7A
- Series :
- Automotive, AEC-Q101
- Datasheets
- DMNH6042SPD-13

N-Channel Tape & Reel (TR) 50m Ω @ 5.1A, 10V ±20V 584pF @ 25V 8.8nC @ 10V 60V 8-PowerTDFN
DMNH6042SPD-13 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 65 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 584pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 24A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 5.7A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 32A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 60V in order to maintain normal operation.Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
DMNH6042SPD-13 Features
the avalanche energy rating (Eas) is 65 mJ
a continuous drain current (ID) of 24A
based on its rated peak drain current 32A.
a 60V drain to source voltage (Vdss)
DMNH6042SPD-13 Applications
There are a lot of Diodes Incorporated
DMNH6042SPD-13 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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