DMNH6021SPSQ-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

60V

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

23m Ω @ 12A, 10V

Gate Charge (Qg) (Max) @ Vgs :

19.7nC @ 10V

Continuous Drain Current (ID) :

55A

Series :

Automotive, AEC-Q101

FET Type :

N-Channel

Published :

2016

Factory Lead Time :

17 Weeks

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Form :

Flat

Additional Feature :

High Reliability

Mount :

Surface Mount

JESD-30 Code :

R-PDSO-F5

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

8-PowerTDFN

Drain to Source Voltage (Vdss) :

60V

Number of Pins :

8

Number of Terminations :

5

Avalanche Energy Rating (Eas) :

64 mJ

Terminal Finish :

Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

55A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

1.6W Ta 53W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Reach Compliance Code :

not_compliant

ECCN Code :

EAR99

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1016pF @ 30V

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED