DMNH6021SK3-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

64 mJ

Additional Feature :

High Reliability

Vgs(th) (Max) @ Id :

3V @ 250µA

Package / Case :

TO-252-5, DPak (4 Leads + Tab), TO-252AD

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

50A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount

Case Connection :

DRAIN

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

50A Tc

DS Breakdown Voltage-Min :

60V

Pulsed Drain Current-Max (IDM) :

80A

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.028Ohm

Rds On (Max) @ Id, Vgs :

23m Ω @ 12A, 10V

Series :

Automotive, AEC-Q101

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Power Dissipation-Max :

2.1W Ta

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

20.1nC @ 10V

Drain to Source Voltage (Vdss) :

60V

Input Capacitance (Ciss) (Max) @ Vds :

1143pF @ 25V

Number of Terminations :

2

Factory Lead Time :

17 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

FET Type :

N-Channel

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2