DMNH6012LK3-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

DS Breakdown Voltage-Min :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2015

Power Dissipation-Max :

2W Ta

Gate Charge (Qg) (Max) @ Vgs :

35.2nC @ 10V

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

60V

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

0.018Ohm

Input Capacitance (Ciss) (Max) @ Vds :

1926pF @ 30V

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

3V @ 250µA

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

12m Ω @ 25A, 10V

Additional Feature :

High Reliability

Series :

Automotive, AEC-Q101

ECCN Code :

EAR99

Factory Lead Time :

17 Weeks

Pulsed Drain Current-Max (IDM) :

120A

JESD-609 Code :

e3

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Reach Compliance Code :

not_compliant

Continuous Drain Current (ID) :

60A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-252-5, DPak (4 Leads + Tab), TO-252AD

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

100 mJ

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Mount :

Surface Mount

Case Connection :

DRAIN

Transistor Application :

SWITCHING