DMNH6008SPSQ-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

88A

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Surface Mount

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

60V

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

194 mJ

Series :

Automotive, AEC-Q101

Reach Compliance Code :

not_compliant

Number of Terminations :

5

Published :

2016

Drain Current-Max (Abs) (ID) :

16.5A

Vgs (Max) :

±20V

Number of Elements :

1

Package / Case :

8-PowerTDFN

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Power Dissipation-Max :

1.6W Ta

Additional Feature :

High Reliability

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

8m Ω @ 20A, 10V

JESD-609 Code :

e3

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

16.5A Ta 88A Tc

Input Capacitance (Ciss) (Max) @ Vds :

2597pF @ 30V

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Number of Pins :

8

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Terminal Form :

Flat

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

60V

JESD-30 Code :

R-PDSO-F5

Factory Lead Time :

17 Weeks

Pulsed Drain Current-Max (IDM) :

140A

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

40.1nC @ 10V