DMNH6008SCTQ

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

60V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3

Continuous Drain Current (ID) :

130A

Number of Elements :

1

Terminal Position :

Single

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Published :

2016

Mount :

Through Hole

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Power Dissipation-Max :

210W Tc

Reach Compliance Code :

not_compliant

Terminal Finish :

Matte Tin (Sn)

FET Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Pulsed Drain Current-Max (IDM) :

200A

Series :

Automotive, AEC-Q101

Input Capacitance (Ciss) (Max) @ Vds :

2596pF @ 30V

Vgs (Max) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.008Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

18 Weeks

Current - Continuous Drain (Id) @ 25°C :

130A Tc

DS Breakdown Voltage-Min :

60V

Avalanche Energy Rating (Eas) :

190 mJ

JESD-30 Code :

R-PSFM-T3

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

8m Ω @ 20A, 10V

Additional Feature :

High Reliability