DMNH6008SCT

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

8m Ω @ 20A, 10V

Published :

2016

Additional Feature :

High Reliability

Vgs(th) (Max) @ Id :

4V @ 250µA

JEDEC-95 Code :

TO-220AB

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

ECCN Code :

EAR99

Mount :

Through Hole

JESD-30 Code :

R-PSFM-T3

Input Capacitance (Ciss) (Max) @ Vds :

2596pF @ 30V

Operating Temperature :

-55°C~175°C TJ

Series :

Automotive, AEC-Q101

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Package / Case :

TO-220-3

Mounting Type :

Through Hole

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

130A Tc

Terminal Finish :

Matte Tin (Sn)

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

18 Weeks

Power Dissipation-Max :

210W Tc

Continuous Drain Current (ID) :

130A

Number of Terminations :

3

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.008Ohm

Pulsed Drain Current-Max (IDM) :

200A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

20V

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

DS Breakdown Voltage-Min :

60V

Drain to Source Voltage (Vdss) :

60V

Terminal Position :

Single

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

190 mJ