DMNH4011SPSQ-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

High Reliability

Continuous Drain Current (ID) :

100A

DS Breakdown Voltage-Min :

40V

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

12.9A Ta 100A Tc

Package / Case :

8-PowerTDFN

Gate Charge (Qg) (Max) @ Vgs :

25.5nC @ 10V

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Series :

Automotive, AEC-Q101

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Reach Compliance Code :

not_compliant

Power Dissipation-Max :

2.5W Ta 150W Tc

FET Type :

N-Channel

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1405pF @ 20V

Drain-source On Resistance-Max :

0.01Ohm

Rds On (Max) @ Id, Vgs :

10m Ω @ 50A, 10V

Number of Elements :

1

Factory Lead Time :

22 Weeks

Drain to Source Voltage (Vdss) :

40V

Transistor Application :

SWITCHING

Terminal Position :

Dual

Published :

2016

JESD-30 Code :

R-PDSO-F5

Number of Pins :

8

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

90A

JESD-609 Code :

e3

Terminal Form :

Flat

Number of Terminations :

5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

12.9A

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

176 mJ