DMNH4011SK3-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

1405pF @ 20V

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

40V

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

10m Ω @ 50A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

50A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Elements :

1

DS Breakdown Voltage-Min :

40V

Operating Temperature :

-55°C~175°C TJ

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

25.5nC @ 10V

Terminal Form :

Gull wing

Published :

2015

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Power Dissipation-Max :

2.6W Ta

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Reference Standard :

AEC-Q101

Case Connection :

DRAIN

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Factory Lead Time :

23 Weeks

Additional Feature :

High Reliability

Drain-source On Resistance-Max :

0.01Ohm

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

120A

Terminal Position :

Single

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)