DMG9N65CTI

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Pbfree Code :

No

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Packaging :

Tube

Power Dissipation-Max :

13W Tc

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

9A Tc

DS Breakdown Voltage-Min :

650V

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

5V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

TO-220-3 Full Pack, Isolated Tab

Turn-Off Delay Time :

122 ns

JEDEC-95 Code :

TO-220AB

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

16.07mm

Continuous Drain Current (ID) :

9A

Rds On (Max) @ Id, Vgs :

1.3 Ω @ 4.5A, 10V

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Additional Feature :

High Reliability

Weight :

2.299997g

Number of Channels :

1

Turn On Delay Time :

39 ns

Terminal Finish :

Matte Tin (Sn)

Gate to Source Voltage (Vgs) :

30V

Drain Current-Max (Abs) (ID) :

9A

Mount :

Through Hole

Rise Time :

29ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Number of Pins :

3

Pin Count :

3

Length :

16.07mm

Drain to Source Voltage (Vdss) :

650V

Width :

4.9mm

Published :

2012

Input Capacitance (Ciss) (Max) @ Vds :

2310pF @ 25V

Fall Time (Typ) :

28 ns

Number of Terminations :

3

Transistor Element Material :

SILICON

Number of Elements :

1