DMG6402LDM-7
- Mfr.Part #
- DMG6402LDM-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 5.3A SOT26
- Stock
- 43,986
- In Stock :
- 43,986
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Mount :
- Surface Mount
- DS Breakdown Voltage-Min :
- 30V
- Current - Continuous Drain (Id) @ 25°C :
- 5.3A Ta
- RoHS Status :
- ROHS3 Compliant
- Drain-source On Resistance-Max :
- 0.027Ohm
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Published :
- 2012
- Turn On Delay Time :
- 3.41 ns
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Form :
- Gull wing
- Package / Case :
- SOT-23-6
- Additional Feature :
- High Reliability
- JESD-609 Code :
- e3
- Number of Channels :
- 1
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 6
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 9.2nC @ 10V
- Rise Time :
- 6.18ns
- Rds On (Max) @ Id, Vgs :
- 27m Ω @ 7A, 10V
- Factory Lead Time :
- 15 Weeks
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Pin Count :
- 6
- Number of Terminations :
- 6
- Peak Reflow Temperature (Cel) :
- 260
- Fall Time (Typ) :
- 2.84 ns
- Length :
- 3.1mm
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Height :
- 1.3mm
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 1.12W
- Input Capacitance (Ciss) (Max) @ Vds :
- 404pF @ 15V
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 5.3A
- Turn-Off Delay Time :
- 13.92 ns
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 30V
- Packaging :
- Tape and Reel (TR)
- Power Dissipation-Max :
- 1.12W Ta
- Width :
- 1.7mm
- Datasheets
- DMG6402LDM-7
DMG6402LDM-7 Documents

N-Channel Tape & Reel (TR) 27m Ω @ 7A, 10V ±20V 404pF @ 15V 9.2nC @ 10V 30V SOT-23-6
DMG6402LDM-7 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 404pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 5.3A amps.It is [13.92 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 3.41 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 30V to maintain normal operation.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
DMG6402LDM-7 Features
a continuous drain current (ID) of 5.3A
the turn-off delay time is 13.92 ns
a 30V drain to source voltage (Vdss)
DMG6402LDM-7 Applications
There are a lot of Diodes Incorporated
DMG6402LDM-7 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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