DMG3415U-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Fall Time (Typ) :

393 ns

Height :

1mm

Factory Lead Time :

5 Weeks

Vgs (Max) :

±8V

Resistance :

42.5mOhm

Operating Temperature :

-55°C~150°C TJ

Weight :

7.994566mg

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

1V @ 250μA

Package / Case :

TO-236-3, SC-59, SOT-23-3

REACH SVHC :

No SVHC

Contact Plating :

Tin

Lead Free :

Lead Free

Rise Time :

117ns

Power Dissipation :

900mW

Power Dissipation-Max :

900mW Ta

Additional Feature :

High Reliability

Threshold Voltage :

-550mV

Drain to Source Breakdown Voltage :

-20V

Element Configuration :

Single

Length :

2.9mm

Number of Channels :

1

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Published :

2012

Gate Charge (Qg) (Max) @ Vgs :

9.1nC @ 4.5V

Radiation Hardening :

No

Number of Pins :

3

Width :

1.3mm

Drain Current-Max (Abs) (ID) :

4A

FET Type :

P-Channel

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Terminal Form :

Gull wing

Turn-Off Delay Time :

795 ns

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Turn On Delay Time :

71 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Rds On (Max) @ Id, Vgs :

39m Ω @ 4A, 4.5V

Current - Continuous Drain (Id) @ 25°C :

4A Ta

Nominal Vgs :

-550 mV

Input Capacitance (Ciss) (Max) @ Vds :

294pF @ 10V

Drain to Source Voltage (Vdss) :

20V

Number of Terminations :

3

Transistor Element Material :

SILICON

Pin Count :

3

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

8V

Continuous Drain Current (ID) :

4A

Mounting Type :

Surface Mount