DF80R12W2H3FB11BPSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Modules

Power - Max :

20mW

Mounting Type :

Chassis Mount

Input Capacitance (Cies) @ Vce :

2.35nF @ 25V

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

1mA

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Input :

Standard

Operating Temperature :

-40°C~150°C TJ

Configuration :

Half Bridge

Current - Collector (Ic) (Max) :

20A

Surface Mount :

No

Turn On Time :

40 ns

Case Connection :

Isolated

Terminal Form :

UNSPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

NTC Thermistor :

yes

Polarity/Channel Type :

N-Channel

Factory Lead Time :

16 Weeks

Voltage - Collector Emitter Breakdown (Max) :

1200V

Terminal Position :

UPPER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

EconoPACK™2

Package / Case :

Module

Transistor Application :

POWER CONTROL

Number of Terminations :

22

IGBT Type :

Trench Field Stop

JESD-30 Code :

R-XUFM-X22

Turn Off Time-Nom (toff) :

375 ns

Vce(on) (Max) @ Vge, Ic :

1.7V @ 15V, 20A

Published :

2002

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED