CYDMX128A16-65BVXI

Manufacturer :

Infineon Technologies

Product Category :

Memory

Radiation Hardening :

No

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Supply Voltage :

1.8V

Time@Peak Reflow Temperature-Max (s) :

30

Mount :

Surface Mount

Organization :

8KX16

Pin Count :

100

RoHS Status :

ROHS3 Compliant

Memory Interface :

Parallel

Address Bus Width :

13b

Number of Functions :

1

Base Part Number :

CYDMX

Peak Reflow Temperature (Cel) :

260

Height Seated (Max) :

1mm

Memory Size :

128Kb 8K x 16

Number of Terminations :

100

Power Supplies :

1.8/3V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Packaging :

Tray

Output Characteristics :

3-STATE

Factory Lead Time :

8 Weeks

Standby Current-Max :

0.000006A

Number of Pins :

100

Density :

128 kb

Supply Voltage-Max (Vsup) :

1.9V

Terminal Pitch :

0.5mm

JESD-609 Code :

e1

Terminal Position :

BOTTOM

Sync/Async :

ASYNCHRONOUS

Operating Temperature :

-40°C~85°C TA

Memory Width :

16

Nominal Supply Current :

70mA

Mounting Type :

Surface Mount

I/O Type :

COMMON

Published :

2011

ECCN Code :

EAR99

Length :

6mm

Memory Type :

Volatile

Supply Voltage-Min (Vsup) :

1.7V

Number of Ports :

2

Package / Case :

100-VFBGA

Voltage - Supply :

1.8V~3.3V

Memory Format :

SRAM

Lead Free :

Contains Lead

Word Size :

16b

Access Time (Max) :

65 ns

Write Cycle Time - Word, Page :

65ns