CYDM064B16-55BVXIT

Manufacturer :

Infineon Technologies

Product Category :

Memory

Number of Functions :

1

Write Cycle Time - Word, Page :

55ns

Length :

6mm

Supply Voltage-Max (Vsup) :

1.9V

Power Supplies :

1.8/3V

Memory Interface :

Parallel

Published :

2005

Organization :

4KX16

Memory Width :

16

Package / Case :

100-VFBGA

Mounting Type :

Surface Mount

Standby Current-Max :

0.000006A

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Sync/Async :

ASYNCHRONOUS

Radiation Hardening :

No

Supply Voltage-Min (Vsup) :

1.7V

RoHS Status :

ROHS3 Compliant

Voltage - Supply :

1.7V~1.9V 2.4V~2.6V 3V~3.6V

Access Time (Max) :

55 ns

Time@Peak Reflow Temperature-Max (s) :

20

Density :

64 kb

Number of Ports :

2

Memory Type :

Volatile

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Nominal Supply Current :

25mA

Operating Temperature :

-40°C~85°C TA

Packaging :

Tape and Reel (TR)

Output Characteristics :

3-STATE

Number of Pins :

100

Height Seated (Max) :

1mm

Terminal Position :

BOTTOM

Lead Free :

Lead Free

Supply Voltage :

1.8V

Word Size :

16b

Mount :

Surface Mount

Number of Terminations :

100

Memory Size :

64Kb 4K x 16

ECCN Code :

EAR99

Pbfree Code :

yes

Terminal Pitch :

0.5mm

Address Bus Width :

24b

Standby Voltage-Min :

1.7V

Base Part Number :

CYDM

Operating Supply Voltage :

1.8V

Memory Format :

SRAM

JESD-609 Code :

e1

I/O Type :

COMMON