CYDM256B16-55BVXI

Manufacturer :

Infineon Technologies

Product Category :

Memory

Address Bus Width :

28b

Output Characteristics :

3-STATE

Mount :

Surface Mount

Memory Width :

16

Memory Interface :

Parallel

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Radiation Hardening :

No

Terminal Position :

BOTTOM

Voltage - Supply :

1.7V~1.9V 2.4V~2.6V 2.7V~3.3V

ECCN Code :

EAR99

Memory Type :

Volatile

Supply Voltage :

1.8V

Organization :

16KX16

Sync/Async :

ASYNCHRONOUS

Standby Current-Max :

0.000006A

RoHS Status :

ROHS3 Compliant

Base Part Number :

CYDM

Length :

6mm

Package / Case :

100-VFBGA

Density :

256 kb

JESD-609 Code :

e1

Power Supplies :

1.8/3V

Supply Voltage-Min (Vsup) :

1.7V

Height Seated (Max) :

1mm

Terminal Pitch :

0.5mm

Memory Size :

256Kb 16K x 16

Write Cycle Time - Word, Page :

55ns

Access Time (Max) :

55 ns

Operating Supply Voltage :

1.8V

Memory Format :

SRAM

Number of Ports :

2

Mounting Type :

Surface Mount

Packaging :

Tray

Published :

1996

Standby Voltage-Min :

1.7V

Supply Voltage-Max (Vsup) :

1.9V

Pin Count :

100

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Functions :

1

Peak Reflow Temperature (Cel) :

260

Number of Pins :

100

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-40°C~85°C TA

Number of Terminations :

100

Lead Free :

Lead Free

Factory Lead Time :

8 Weeks

Nominal Supply Current :

25mA

Word Size :

16b

I/O Type :

COMMON