CYDM256B16-55BVXIT

Manufacturer :

Infineon Technologies

Product Category :

Memory

Length :

6mm

Memory Format :

SRAM

Word Size :

16b

Sync/Async :

ASYNCHRONOUS

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Number of Pins :

100

Terminal Pitch :

0.5mm

Power Supplies :

1.8/3V

Supply Voltage :

1.8V

Nominal Supply Current :

25mA

Supply Voltage-Max (Vsup) :

1.9V

Memory Interface :

Parallel

Package / Case :

100-VFBGA

Access Time (Max) :

55 ns

Standby Current-Max :

0.000006A

Output Characteristics :

3-STATE

Height Seated (Max) :

1mm

Mount :

Surface Mount

Address Bus Width :

14b

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Write Cycle Time - Word, Page :

55ns

Voltage - Supply :

1.7V~1.9V 2.4V~2.6V 3V~3.6V

Operating Supply Voltage :

1.8V

Memory Type :

Volatile

I/O Type :

COMMON

Supply Voltage-Min (Vsup) :

1.7V

ECCN Code :

EAR99

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-40°C~85°C TA

Memory Width :

16

Density :

256 kb

Memory Size :

256Kb 16K x 16

Number of Terminations :

100

Standby Voltage-Min :

1.7V

Base Part Number :

CYDM

Number of Functions :

1

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Packaging :

Tape and Reel (TR)

Number of Ports :

2

Factory Lead Time :

8 Weeks

Organization :

16KX16

RoHS Status :

ROHS3 Compliant

Published :

2005

Pbfree Code :

yes

Lead Free :

Lead Free

JESD-609 Code :

e1

Terminal Position :

BOTTOM