CYDM256B16-55BVXIT

Manufacturer :

Infineon Technologies

Product Category :

Memory

Terminal Position :

BOTTOM

Operating Supply Voltage :

1.8V

Package / Case :

100-VFBGA

Write Cycle Time - Word, Page :

55ns

Base Part Number :

CYDM

Supply Voltage-Min (Vsup) :

1.7V

Radiation Hardening :

No

Height Seated (Max) :

1mm

JESD-609 Code :

e1

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

30

Access Time (Max) :

55 ns

Terminal Pitch :

0.5mm

Packaging :

Tape and Reel (TR)

Factory Lead Time :

8 Weeks

Operating Temperature :

-40°C~85°C TA

Number of Ports :

2

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Length :

6mm

Memory Format :

SRAM

Mount :

Surface Mount

Address Bus Width :

14b

Pbfree Code :

yes

I/O Type :

COMMON

Published :

2005

Power Supplies :

1.8/3V

Memory Size :

256Kb 16K x 16

Number of Terminations :

100

Memory Interface :

Parallel

Mounting Type :

Surface Mount

Sync/Async :

ASYNCHRONOUS

Peak Reflow Temperature (Cel) :

260

Supply Voltage-Max (Vsup) :

1.9V

Memory Type :

Volatile

Number of Functions :

1

Supply Voltage :

1.8V

Organization :

16KX16

Standby Current-Max :

0.000006A

Voltage - Supply :

1.7V~1.9V 2.4V~2.6V 3V~3.6V

RoHS Status :

ROHS3 Compliant

Density :

256 kb

Word Size :

16b

Output Characteristics :

3-STATE

Nominal Supply Current :

25mA

Standby Voltage-Min :

1.7V

Number of Pins :

100

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Memory Width :

16

ECCN Code :

EAR99