CSD25485F5

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

-12V

DS Breakdown Voltage-Min :

20V

Drain to Source Voltage (Vdss) :

20V

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

CSD25485

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.07Ohm

Terminal Position :

BOTTOM

Power Dissipation-Max :

500mW Ta

Element Configuration :

Single

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

533pF @ 10V

Number of Terminations :

3

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

3-SMD, No Lead

Gate Charge (Qg) (Max) @ Vgs :

3.5nC @ 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 8V

Operating Temperature :

-55°C~150°C TJ

Thickness :

338μm

Current - Continuous Drain (Id) @ 25°C :

3.2A Ta

Rds On (Max) @ Id, Vgs :

35m Ω @ 900mA, 8V

Factory Lead Time :

8 Weeks

FET Type :

P-Channel

Vgs(th) (Max) @ Id :

1.3V @ 250µA

Packaging :

Tape and Reel (TR)

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Length :

1.49mm

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Continuous Drain Current (ID) :

3.2A

Mounting Type :

Surface Mount

Pbfree Code :

yes

Series :

FemtoFET™

Width :

730μm