CSD25483F4T
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- Mfr.Part #
- CSD25483F4T
- Manufacturer
- Texas Instruments
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 1.6A 3PICOSTAR
- Stock
- 62,175
- In Stock ：
- 62,175
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Input Capacitance (Ciss) (Max) @ Vds :
- 198pF @ 10V
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 1.6A
- Turn On Delay Time :
- 4.3 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- 3-XFDFN
- Width :
- 635μm
- Height :
- 350μm
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- -12V
- Additional Feature :
- ULTRA LOW RESISTANCE
- Base Part Number :
- CSD25483
- Peak Reflow Temperature (Cel) :
- 260
- Gate Charge (Qg) (Max) @ Vgs :
- 0.96nC @ 4.5V
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- FET Type :
- P-Channel
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 7 ns
- Turn-Off Delay Time :
- 17.4 ns
- Element Configuration :
- Single
- Factory Lead Time :
- 6 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 1.6A Ta
- Terminal Position :
- BOTTOM
- Terminal Form :
- NO LEAD
- Lead Free :
- Lead Free
- Rise Time :
- 3.7ns
- Series :
- FemtoFET™
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- DS Breakdown Voltage-Min :
- 20V
- Number of Elements :
- 1
- Threshold Voltage :
- -950mV
- Number of Channels :
- 1
- Drain to Source Voltage (Vdss) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 205m Ω @ 500mA, 8V
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 1.2V @ 250µA
- Length :
- 1.035mm
- Power Dissipation-Max :
- 500mW Ta
- Transistor Application :
- SWITCHING
- Datasheets
- CSD25483F4T
P-Channel Tape & Reel (TR) 205m Ω @ 500mA, 8V 198pF @ 10V 0.96nC @ 4.5V 20V 3-XFDFN
CSD25483F4T Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 198pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 17.4 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 4.3 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes -12VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is -950mV.In order for DS breakdown voltage to remain above 20V, it should remain above the 20V level.The transistor must receive a 20V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (1.8V 4.5V).
CSD25483F4T Features
a continuous drain current (ID) of 1.6A
the turn-off delay time is 17.4 ns
a threshold voltage of -950mV
a 20V drain to source voltage (Vdss)
CSD25483F4T Applications
There are a lot of Texas Instruments
CSD25483F4T applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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