CSD25481F4

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

4.1 ns

Rds On (Max) @ Id, Vgs :

88m Ω @ 500mA, 8V

Lead Free :

Lead Free

Factory Lead Time :

6 Weeks

Drain to Source Breakdown Voltage :

-20V

RoHS Status :

ROHS3 Compliant

Rise Time :

3.6ns

Input Capacitance (Ciss) (Max) @ Vds :

189pF @ 10V

Power Dissipation :

500mW

Mounting Type :

Surface Mount

Height :

350μm

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

Width :

635μm

FET Type :

P-Channel

ECCN Code :

EAR99

Power Dissipation-Max :

500mW Ta

Terminal Form :

NO LEAD

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

2.5A

Mount :

Surface Mount

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

20V

Gate Charge (Qg) (Max) @ Vgs :

0.913nC @ 4.5V

Fall Time (Typ) :

6.7 ns

Number of Pins :

3

Operating Mode :

-0.95

Length :

1.035mm

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

BOTTOM

Gate to Source Voltage (Vgs) :

-12V

Package / Case :

3-XFDFN

Base Part Number :

CSD25481

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Element Configuration :

Single

Series :

NexFET™

Turn-Off Delay Time :

16.9 ns

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)