CSD25402Q3AT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±12V

Terminal Position :

Dual

Power Dissipation-Max :

2.8W Ta 69W Tc

Drain-source On Resistance-Max :

0.0159Ohm

Transistor Element Material :

SILICON

Case Connection :

SOURCE

Surface Mount :

yes

Series :

NexFET™

JESD-30 Code :

R-PDSO-F8

Drain Current-Max (Abs) (ID) :

35A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

1.15V @ 250μA

Rds On (Max) @ Id, Vgs :

8.9m Ω @ 10A, 4.5V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

20V

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Number of Terminations :

5

Current - Continuous Drain (Id) @ 25°C :

15A Ta 76A Tc

Package / Case :

8-PowerVDFN

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

1790pF @ 10V

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

9.7nC @ 4.5V

Number of Elements :

1

Transistor Application :

SWITCHING

Factory Lead Time :

6 Weeks

RoHS Status :

RoHS Compliant

Pulsed Drain Current-Max (IDM) :

148A

Terminal Form :

Flat

Reach Compliance Code :

Compliant

FET Type :

P-Channel

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

20V