CSD25401Q3
- Mfr.Part #
- CSD25401Q3
- Manufacturer
- Texas Instruments
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 14A/60A 8VSON
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 11.7m Ω @ 10A, 4.5V
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 13.5 ns
- Termination :
- SMD/SMT
- Series :
- NexFET™
- Drain Current-Max (Abs) (ID) :
- 60A
- Operating Mode :
- ENHANCEMENT MODE
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Lead Free :
- Contains Lead
- Vgs (Max) :
- ±12V
- Number of Terminations :
- 5
- Turn On Delay Time :
- 8.1 ns
- Number of Pins :
- 8
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Rise Time :
- 3.9ns
- Current - Continuous Drain (Id) @ 25°C :
- 14A Ta 60A Tc
- Operating Temperature :
- -55°C~150°C TJ
- REACH SVHC :
- No SVHC
- Power Dissipation-Max :
- 2.8W Ta
- Input Capacitance (Ciss) (Max) @ Vds :
- 1400pF @ 10V
- Pbfree Code :
- No
- Contact Plating :
- Tin
- Nominal Vgs :
- 850 mV
- Package / Case :
- 8-PowerTDFN
- Pin Count :
- 8
- Terminal Position :
- Dual
- Additional Feature :
- AVALANCHE RATED
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 12.6 ns
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 1.2V @ 250µA
- Case Connection :
- SOURCE
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Base Part Number :
- CSD25401
- Drain to Source Breakdown Voltage :
- -20V
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Power Dissipation :
- 2.8W
- Dual Supply Voltage :
- 20V
- Gate to Source Voltage (Vgs) :
- 12V
- Gate Charge (Qg) (Max) @ Vgs :
- 12.3nC @ 4.5V
- JESD-30 Code :
- R-PDSO-N5
- Packaging :
- Tape and Reel (TR)
- FET Type :
- P-Channel
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 14A
- Threshold Voltage :
- 850mV
- Datasheets
- CSD25401Q3
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P-Channel Tape & Reel (TR) 11.7m Ω @ 10A, 4.5V ±12V 1400pF @ 10V 12.3nC @ 4.5V 8-PowerTDFN
CSD25401Q3 Description
NexFETm Power MOSFET CSD25401Q3 is designed to minimize loss in power conversion load management applications. The SON 3x3 package provides excellent thermal performance that matches the package size.
CSD25401Q3 FEATURES
· Ultra Low Qg and Qgd LowThermal Resistance Low RDs(on)
·Pb Free Terminal Plating RoHS Compliant Halogen Free
·SON 33mm x3.3mm Plastic Package
CSD25401Q3 APPLICATIONS
DC-DC Converters Battery Management Load Switch
Battery Protection
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