CSD25310Q2T

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

23.9m Ω @ 5A, 4.5V

Pbfree Code :

yes

Number of Terminations :

6

FET Type :

P-Channel

RoHS Status :

ROHS3 Compliant

Series :

NexFET™

JESD-609 Code :

e3

Case Connection :

SOURCE

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

48A

Input Capacitance (Ciss) (Max) @ Vds :

655pF @ 10V

Base Part Number :

CSD25310

Factory Lead Time :

6 Weeks

Terminal Form :

NO LEAD

Drain-source On Resistance-Max :

0.089Ohm

Terminal Position :

Dual

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Power Dissipation-Max :

2.9W Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Package / Case :

6-WDFN Exposed Pad

Transistor Application :

SWITCHING

JESD-30 Code :

S-PDSO-N6

Gate Charge (Qg) (Max) @ Vgs :

4.7nC @ 4.5V

Terminal Finish :

Matte Tin (Sn)

Drain Current-Max (Abs) (ID) :

9.6A

Feedback Cap-Max (Crss) :

21.7 pF

ECCN Code :

EAR99

Vgs (Max) :

±8V

Drain to Source Voltage (Vdss) :

20V

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

20V

Transistor Element Material :

SILICON