CSD25310Q2
- Mfr.Part #
- CSD25310Q2
- Manufacturer
- Texas Instruments
- Package / Case
- 6-WDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 20A 6WSON
- Stock
- 1,210
- In Stock :
- 1,210
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e4
- Number of Terminations :
- 6
- Case Connection :
- SOURCE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs (Max) :
- ±8V
- Operating Mode :
- ENHANCEMENT MODE
- Turn On Delay Time :
- 8 ns
- Rise Time :
- 15ns
- ECCN Code :
- EAR99
- Number of Pins :
- 6
- Continuous Drain Current (ID) :
- 20A
- Power Dissipation-Max :
- 2.9W Ta
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 23.9m Ω @ 5A, 4.5V
- Series :
- NexFET™
- Width :
- 2mm
- Fall Time (Typ) :
- 5 ns
- Current - Continuous Drain (Id) @ 25°C :
- 20A Ta
- Base Part Number :
- CSD25310
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 2.9W
- Lead Free :
- Lead Free
- FET Type :
- P-Channel
- DS Breakdown Voltage-Min :
- 20V
- Gate to Source Voltage (Vgs) :
- 8V
- Terminal Form :
- NO LEAD
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Turn-Off Delay Time :
- 15 ns
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Drain to Source Voltage (Vdss) :
- 20V
- Threshold Voltage :
- -850mV
- Package / Case :
- 6-WDFN Exposed Pad
- Gate Charge (Qg) (Max) @ Vgs :
- 4.7nC @ 4.5V
- Vgs(th) (Max) @ Id :
- 1.1V @ 250μA
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Mount :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 655pF @ 10V
- Number of Elements :
- 1
- Length :
- 2mm
- Terminal Position :
- Dual
- Thickness :
- 750μm
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Pulsed Drain Current-Max (IDM) :
- 48A
- Drain-source On Resistance-Max :
- 0.089Ohm
- Factory Lead Time :
- 8 Weeks
- Datasheets
- CSD25310Q2

P-Channel Tape & Reel (TR) 23.9m Ω @ 5A, 4.5V ±8V 655pF @ 10V 4.7nC @ 4.5V 20V 6-WDFN Exposed Pad
CSD25310Q2 MOSFET Description
The CSD25310Q2 is a 19.9 m, –20 V P-Channel device that is designed to give the lowest on resistance and gate charge while maintaining outstanding thermal characteristics in an ultra-low profile. The device's low resistance combined with an incredibly small footprint in a SON 2 mm 2 mm plastic container make it perfect for battery-operated space-restricted tasks.
CSD25310Q2 MOSFET Features
Low On-Resistance
Low Thermal Resistance
Ultra-Low Qg and Qgd
SON 2-mm × 2-mm Plastic Package
Halogen Free
Pb-Free
RoHS Compliant
CSD25310Q2 MOSFET Applications
Battery Protection
Load Management
Portable Devices
MCU
Battery Management
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